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Method for fast measuring imprinting effect of ferroelectric film

A ferroelectric thin film and effect technology, applied in the field of microelectronics, can solve problems such as read and write operation voltage failure, remanent polarization value becomes smaller, and data retention characteristics become worse, achieving good application prospects and reducing time effects

Active Publication Date: 2011-01-12
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The imprinting effect will bring two serious problems to ferroelectric thin film storage devices: one is that after a long time of reading and writing operations, the residual polarization value in a certain polarization direction will be reduced, resulting in poor data retention characteristics; the other is that due to A change in the coercive voltage value will cause a change in the reading and writing operation voltage of the device, making the original reading and writing operation voltage invalid
The traditional test method has the following defects, because the time of applying the test voltage is too long will introduce a new imprinting effect

Method used

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  • Method for fast measuring imprinting effect of ferroelectric film
  • Method for fast measuring imprinting effect of ferroelectric film
  • Method for fast measuring imprinting effect of ferroelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1. Measuring the imprinting effect produced by adding an imprinting voltage of a certain time and a certain size

[0027] Use the signal generator to edit a bias voltage V that can make the ferroelectric film produce imprinting effect b , the size should satisfy |V b |>|V C |, the range of time t can be from the order of nanoseconds to the order of seconds. at V b Immediately after the end, add a reverse voltage in the opposite direction (V SW ), the pulse time is about tens of nanoseconds, and the size should satisfy |V SW |>|V b |, which reverses the domain polarization to generate a polarization reversal current. Finally, use an oscilloscope to read the load voltage (V L =I SW × R L ). According to the formula of reverse current

[0028]

[0029] Launch V C =V SW -I SW × R L =V SW -V L , so that V C value. The test pulse waveform is as image 3 shown.

[0030] Describe below in conjunction with specific example, the ferroelectric fi...

Embodiment 2

[0034] Measuring the imprinting effect after applying a preset bias voltage and then waiting for a period of time after a reverse pulse

[0035] Different from the imprinting effect produced by adding an imprinting voltage of a certain size and time, the pulse waveform applied in the test is as follows: Figure 7 As shown in , first apply a positive voltage pulse V presetting As a preset voltage, its magnitude should satisfy |V presetting |>|V C|, the pulse time is tens of nanoseconds, and the function of the preset voltage is to make the electric domain of the ferroelectric film turn to one direction first. After adding the preset voltage, in order to keep the injected charge in a stable equilibrium state, it is necessary to wait for a relaxation time t rel , the length of time is t rel =5s+20t, where t is the time interval between two positive and negative bipolar pulses applied later to test the imprinting effect. stay in t rel Finally, add a positive and negative bip...

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Abstract

The invention belongs to the technical field of microelectronics, and relates to a method for testing the imprinting effect of a ferroelectric film. In the method, the imprinting effect of the ferroelectric film is fast measured by measuring the polarization reversal current of the ferroelectric film; and the method comprises the following steps of: (1) applying a pulse voltage with polarity opposite to that of an imprinting voltage immediately when the pulse voltage which produces the imprinting effect is applied, and measuring the reversal current of the ferroelectric film; and (2) applying the pulse voltage with a preset polarization direction, applying the pulse voltage which has both positive polarity and negative polarity and functions in imprinting after a period of relaxation time, producing the imprinting effect after a period of time, and finally applying a voltage which has both the positive polarity and negative polarity and is exactly the same as the pulse voltage with both the positive polarity and negative polarity to measure the reversal current. The method can replace the conventional methods for obtaining Vc by measuring a ferroelectric hysteresis loop, and has the advantages of capacity of greatly shortening time required by test on the imprinting effect and vast application prospect.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, relates to ferroelectric thin film technology and ferroelectric thin film storage device technology, in particular to a method for quickly measuring the imprinting effect of ferroelectric thin film. Background technique [0002] Ferroelectric thin film memory device is a kind of non-volatile memory device. It uses two different polarization orientations of ferroelectric domains in the electric field as logic units to store data. It has the advantages of fast read and write speed, low driving voltage, high storage density and Due to the advantages of non-volatility and other advantages, it has become a storage device with great potential. At present, it has been firstly applied in electronic products with low power consumption such as mobile phones, walkmans, game cards and digital cameras. Solving the problem of device reliability is the key to the further development of ferroelectric th...

Claims

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Application Information

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IPC IPC(8): G01R31/00
Inventor 江安全翁旭东
Owner FUDAN UNIV
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