Polycrystalline silicon ingot ripping method

Abstract

The invention discloses a polycrystalline silicon ingot ripping method, which comprises the following steps of: 1, pouring cooling liquid into a slurry tank and adhering a polycrystalline silicon ingot onto a tray; 2, mounting a diamond steel wire on an unwinding shaft on a workbench to form a wire net by wire laying at a low tension value, and performing wire laying at a high tension value after a high wire level and a lower wire level are set; 3, assembling the tray with the fixed polycrystalline silicon ingot into a machine, adjusting the position of the tray to ensure that the cut thicknesses of off cut on the four sides are equal, lowering the workbench down, allowing the bottom wire net to suspend at a position which is 1mm away from the highest point on the surface of the silicon ingot, and setting the position as a null position; and 4, closing all sliding doors and setting cutting parameters for cutting, wherein the cutting parameters comprise a workbench speed, a linear speed, flow, tension and a wire returning rate. In the embodiment of the invention, the diamond steel wire is adopted, so that the production efficiency of an ingot ripping process is improved, and manufacturing cost in the process is reduced.

Description

technical field [0001] The invention relates to the field of solar cell panel processing technology, more specifically, to a polycrystalline silicon ingot breaking method. Background technique [0002] In the traditional polysilicon ingot breaking process, the ingot breaking machine usually uses a steel wire carrying mortar to cut the ingot. Since the main body of the ingot cutting is silicon carbide in the mortar (a mixture of suspension and silicon carbide), silicon carbide must be added to The quality of broken ingots is guaranteed, but the production of silicon carbide consumes a lot of energy and causes high pollution. In addition, the traditional ingot breaking process takes into account the traditional steel wire cutting ability, the table speed is usually controlled at 600-800um / min, and the return rate is controlled at about 90-95%, so the cutting efficiency is relatively low. In order to increase the cutting speed and avoid the high energy consumption and high pol...

AI Technical Summary

Problems solved by technology

[0002] In the traditional polysilicon ingot breaking process, the ingot breaking machine usually uses a steel wire carrying mortar to cut the ingot. Since the main body of the ingot cutting is silicon carbide in the mortar (a mixture of suspension and silicon carbide), silicon carbide must be added to Guarantee the quality of broken ingots, but high energy consumption and high pollution during the production of silicon carbide

In addition, the traditional ingot breaking process takes into account the traditional steel wire cutting ability, the table speed is usually controlled at 600-800um / min, and the return rate is controlled at about 90-95%, so the cutting efficiency is relatively low

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