Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Measuring method of magnetic resistivity of substance under the condition of high voltage

A measurement method and magnetoresistance technology, applied in the field of physical quantity measurement, to achieve the effect of not easily deformed and ensuring accuracy

Inactive Publication Date: 2010-12-01
JILIN UNIV
View PDF1 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is precisely because of the limitations of experimental technology that the measurement of the magnetoresistivity of the diamond against the material in the anvil under high pressure is still a blank in high-voltage technology.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measuring method of magnetic resistivity of substance under the condition of high voltage
  • Measuring method of magnetic resistivity of substance under the condition of high voltage
  • Measuring method of magnetic resistivity of substance under the condition of high voltage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1 illustrates the structure and performance of the assembly equipment of the present invention in conjunction with the accompanying drawings

[0025] exist figure 1 Among them, 1 is the two diamond anvils of the diamond counter-anvil, 2 is the shaking table, steel material is selected as the shaking table, 3 is the Gauss meter probe, 4 is the gasket, and the metal rhenium sheet is selected as the gasket, 5 is the press , preferably a four-column press of BeCu alloy.

[0026] figure 2 Among them, 4 is a gasket, 12 is a sample cavity, which is composed of the surface of the upper and lower diamond anvil 1 and the cavity of the gasket 4, 13 is an electrode, which can be a metal material electrode, 14 is a protective layer, and A, B, C, D are electrodes lead. On the surface of one of the diamond anvils 1 on the diamond anvil, deposit mutually isolated metal electrodes 13; the distribution of each electrode 13 is from the anvil surface to the side of the diamo...

Embodiment 2

[0029] Embodiment 2 Concrete test process

[0030] The first step: Clean the surface of the two diamond anvils 1 used, and then coat one of them with a metal film. Metal electrode 13 for DePauw resistance measurement. Finally, lead the electrodes out from the lower part of the diamond anvil 1 with wires (electrode leads A, B, C, D) for measurement.

[0031] Step 2: Fix two diamond anvils 1 on the upper and lower shakers 2 respectively, and then center and level the press 5 .

[0032] The third step: Encapsulate the sample.

[0033] Step 4: Place the press 5 in the magnetic field. During this process, ensure that the direction of the magnetic field is perpendicular to the direction of the current in the sample (that is, it must be perpendicular to the entire electrode or the surface of the diamond anvil). The magnetic field is generated by the heads of a pair of electromagnets. The surfaces of the two heads are always parallel, and the direction of the magnetic field is perp...

Embodiment 3

[0037] Example 3 Research on boron high voltage magnetoresistance

[0038] According to the steps of Example 2, the resistivity and magnetic field strength of the β-boron sample were measured under pressures of 1.37GPa and 17.65GPa, respectively.

[0039] Figure 4 Shown are the resistivity and magnetic field data of the β-boron sample at 1.37GPa and the relationship between the resistivity and the magnetic field. As the magnetic field increases, the resistivity increases rapidly, and when the magnetic field increases to 3000Oe, the resistivity begins to decrease rapidly.

[0040] Figure 5 Shown are the data of magnetoresistivity and magnetic field strength of β-boron samples at 17.65GPa and the relationship between resistivity and magnetic field strength. When the magnetic field intensity is low, the magnetoresistance change trend does not change, but the magnetoresistance increases slowly with the increase of the magnetic field under high field.

[0041] From Figure 4...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a measuring method of the magnetic resistivity of a substance under the condition of high voltage, belonging to the technical field of measurement of physical quantities. The magnetic resistivity of the substance is measured on diamond anvil cells of a metal film electrode (13) on the basis of the van der pauw resistance measurement method according to the following test steps of: assembling equipment; regulating a magnetic field; carrying out the in-site measurement of magnetic field strength; measuring the magnetic resistivity; and the like. The metal film electrode (13) is deposited on one the used diamond anvil cells; a pressing machine (5) and a spacer (4) are both made of nonmagnetic materials; and only a shaking table (2) is made of steel materials. The invention mainly obtains the technical effect of accurately measuring the magnetoresistance effect of a sample under the condition of the high voltage, establishes a nonmagnetic measurement environment, provides a uniform magnetic field on space for the sample, eliminates the influences of lead resistance and contact resistance and carries out the in-site measurement on the magnetic field strength inside a cavity of the sample; and in addition, the used metal electrode (13) can bear high pressure without being cut easily.

Description

technical field [0001] The invention belongs to the technical field of physical quantity measurement, in particular to a method for measuring the magnetoresistivity of samples under high pressure conditions. Background technique [0002] The application of diamond-on-anvil (DAC) is a major breakthrough in the field of high-voltage testing, and it is also one of the most common high-voltage generating devices used by high-voltage researchers. Its ability to generate ultra-high pressure conditions provides people with the possibility of a deeper understanding of the high-pressure nature of matter. With the emergence of various high-energy detection equipment, with the help of DAC technology, people have realized the research of various physical properties of matter, such as material structure research, Raman spectroscopy research, fluorescence spectroscopy research, magnetic conversion research, magnetoresistance research, electrical nature research, etc. The magnetoresistan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R27/02
Inventor 高春晓李明张东梅杨洁韩永昊彭刚刘洪武邹广田
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com