Silicon wafer cleaning agent and use method thereof
A silicon wafer cleaning agent and a technology for silicon wafers, applied in the field of cleaning agents, can solve the problems of white spots, inability to prevent air or water from contacting silicon, black spots on silicon wafers, etc., and achieve the effects of environmental harmlessness, low cost and simple operation.
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Embodiment 1
[0014] The present embodiment comprises ozone, triethanolamine, fatty alcohol polyoxyethylene ether and water, and the volume ratio of each component is ozone: triethanolamine: fatty alcohol polyoxyethylene ether: water=0.05: 4: 0.5: 30;
[0015] A method for using a silicon wafer cleaning agent, comprising the following steps:
[0016] (1) Immerse the silicon wafer in the above-mentioned silicon wafer cleaning agent for 200-500 seconds, and a silicon dioxide layer grows on the surface of the silicon wafer;
[0017] (2) Ultrasonic vibration of the cleaning agent for 300s, the temperature is 60°C, and the frequency is 40KHz.
Embodiment 2
[0019] This embodiment comprises hydrogen peroxide, sodium alkoxide, maleic acid 2-2-octyl sulfonate sodium and water, and the volume ratio of each component is hydrogen peroxide: sodium alkoxide: maleic acid 2-2-octyl sulfonate sodium: water =0.1:3:0.7:45;
[0020] A method for using a silicon wafer cleaning agent, comprising the following steps:
[0021] (1) immerse the silicon wafer in the above-mentioned silicon wafer cleaning agent for 300s, and a silicon dioxide layer grows on the surface of the silicon wafer;
[0022] (2) Ultrasonic vibration of the cleaning agent for 200s, the temperature is 50°C, and the frequency is 40KHz.
Embodiment 3
[0024] Present embodiment comprises ozone, amide lithium, fatty alcohol polyoxyethylene ether and water, and the volume ratio of each component is ozone: amide lithium: fatty alcohol polyoxyethylene ether: water=0.08: 4: 0.6: 50;
[0025] A kind of using method of silicon wafer cleaning agent comprises the following steps:
[0026] (1) immerse the silicon wafer in the above-mentioned silicon wafer cleaning agent for 250s, and a silicon dioxide layer grows on the surface of the silicon wafer;
[0027] (2) Ultrasonic vibration of the cleaning agent for 300s, the temperature is 60°C, and the frequency is 40KHz.
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