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Plasma-enhanced chemical vapor deposition PECVD equipment

A chemical vapor deposition, plasma technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the first cell effect and other problems, to improve product quality and production efficiency, improve quality and excellent Productivity, the effect of increasing flexibility

Active Publication Date: 2010-04-14
ENN SOLAR ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides a plasma-enhanced chemical vapor deposition equipment and method, so that when the PECVD equipment produces the first cell after a long period of stoppage, the deposition chamber of the PECVD equipment is in the same state as during normal deposition, so as to solve the "second The problem of "one-cell effect"

Method used

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  • Plasma-enhanced chemical vapor deposition PECVD equipment
  • Plasma-enhanced chemical vapor deposition PECVD equipment
  • Plasma-enhanced chemical vapor deposition PECVD equipment

Examples

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Embodiment Construction

[0024] The specific structure of a plasma-enhanced chemical vapor deposition equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0025] A kind of plasma-enhanced chemical vapor deposition PECVD equipment provided by the embodiment of the present invention, such as figure 2 As shown, it includes: PECVD deposition chamber 201, heat exchanger 202 and heat exchange pipeline 203;

[0026] The heat exchanger 202 is connected with the heat exchange pipeline 203, and is used for heating the fluid in the heat exchange pipeline 203;

[0027] One end of the heat exchange pipeline 203 is connected to the heat exchanger 202; the other end is divided into two branches 2031 and 2032 leading to the support plate 2011 of the PECVD deposition chamber 201 and the substrate 2012 of the PECVD deposition chamber respectively for heating the support plate 2011 and base 2012 to reach the set temperature. The set temperature i...

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Abstract

The invention discloses a plasma-enhanced chemical vapor deposition PECVD equipment comprising a PECVD chamber, a heat exchanger and a heat exchange pipeline, wherein the PECVD chamber comprises a supporting plate and a base plate; the heat exchanger is used for heating the fluid in the heat exchange pipeline; one end of the heat exchange pipeline is connected with the heat exchanger and the other end thereof is divided into two branch pipelines which respectively lead to the supporting plate and the base plate of the PECVD chamber and are used for heating the supporting plate and the base plate so as to stably reach the temperature state for normally generating a deposition reaction; and in the production process of 'a first battery plate', the equipment can avoid the problem that the first battery plate effect is generated as the equipment temperature does not reach the temperature state for normally generating the deposition reaction and improve the quality of the product and the yield rate of good products.

Description

technical field [0001] The invention relates to a plasma-enhanced chemical vapor deposition PECVD process, in particular to a PECVD device. Background technique [0002] In the production process of silicon-based thin-film solar cells, the coating process needs to be completed in the plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) equipment. The existing practice finds that if the PECVD equipment stops running for a long time, it will be resumed. The color difference between the first cell produced after visual inspection and the normal product is different, and the photoelectric conversion efficiency is also lower than the normal product by more than 15% after testing, which is also called the first cell effect in the industry. [0003] Analyzing the reason, when depositing the first cell, some parts of the PECVD equipment did not fully reach the stable temperature, and the temperature change diagram is as follows figure 1 As sh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/50
Inventor 代飞顺郭铁
Owner ENN SOLAR ENERGY
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