LED electrode structure

Abstract

The invention discloses an LED electrode structure, comprising a first electrode and a second electrode, wherein, the first electrode comprises at least two first ring finger parts, at least one first connection part and at least one first contact part; each first ring finger part is connected with the first connection part; the first contact part is arranged on the first ring finger part; the second electrode comprises at least two second ring finger parts, at least one second connection part and at least one second contact part; each second ring finger part is connected with the second connection part; the second contact part is inserted in the corner of the second connection part; the second electrode surrounds the first electrode in a closed manner and certain space exists between each part of the first electrode and the corresponding part of the second electrode. The LED electrode structure enables the distribution of the current of the light-emitting components and heating to be more uniform.

Description

technical field [0001] The invention relates to the field of semiconductor devices, and specifically discloses an LED electrode structure. Background technique [0002] In recent years, III-nitride materials and devices have become a research hotspot, especially nitride light-emitting diodes (LEDs). After continuous research and development, at present, the technology of growing nitrides using sapphire as a substrate has become mature and stable, and the technology of growing nitrides on Si substrates as a new substrate material is also gradually being developed. As one of the solid-state light-emitting elements, the main structure of the light-emitting diode includes a P-type semiconductor layer, an N-type semiconductor layer and a light-emitting layer between them. When the injection current is applied to the first contact layer included in the first electrode and the second contact layer included in the second electrode, holes in the P-type semiconductor layer and electr...

AI Technical Summary

Problems solved by technology

For traditional nitride light-emitting diodes, due to the low conductivity of P-type nitride, the lateral conductivity of the current in it is much lower than the vertical conductivity, so that the current cannot be effectively and evenly distributed after being injected from the contact part. The light-emitting layer of the light-emitting diode can only be distributed in the effective area of ​​the P-type nitride semiconductor layer under the P-type contact electrode, and cannot be distributed laterally to the entire P-type nitride semiconductor layer

This causes uneven current spread throughout the light-emitting element, resulting in uneven luminous brightness

Moreover, for traditional nitride light-emitting diodes, the paths from the first electrode to the second electrode are not equidistant, which is also one of the reasons for uneven current spreading.

In addition, the current distribution is uneven, resulting in uneven heating, and the local performance of the device is easily damaged, which makes the reliability of the light-emitting element poor.

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