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Etching method and recording medium

一种蚀刻、硬质的技术，应用在放电管、电气元件、电固体器件等方向，能够解决蚀刻选择比低、加工形状不够充分等问题，达到表面形状良好的效果

Inactive Publication Date: 2009-12-16
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, if the fluorine-added carbon membrane is used with CF 4 When etching with CxFy-containing gas such as CxFy, the etching selectivity to hard mask layers such as SiN or SiCN used as an etching mask is low, and there is a problem that the processed shape is not sufficient.

Method used

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  • Etching method and recording medium

Examples

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Embodiment Construction

[0052] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0053] figure 1 It is a sectional view showing an example of a plasma processing apparatus capable of carrying out the etching method of the present invention. This plasma processing apparatus is of a type that forms a capacitively coupled plasma using a pair of parallel plate electrodes disposed facing up and down.

[0054] Such as figure 1 As shown in the schematic configuration shown in , the plasma processing apparatus 10 includes a processing chamber 11 formed in a substantially cylindrical shape, a susceptor support table 14 is disposed at the bottom of the chamber with an insulating plate 13 interposed therebetween, and a susceptor 15 is disposed thereon. . The susceptor 15 also serves as a lower electrode, and a wafer W is placed on the susceptor 15 via an electrostatic chuck 20 . Symbol 16 is a high pass filter (HPF).

[0055] Inside the susceptor supporti...

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Abstract

Provided is an etching method wherein a fluorine-added carbon film formed on a substrate is etched by plasma. The method includes a first step of performing etching with plasma of an oxygen-containing treatment gas, and a second step of performing etching with plasma of a fluorine-containing treatment gas.

Description

technical field [0001] The present invention relates to an etching method for etching a fluorine-doped carbon film formed on a substrate such as a semiconductor substrate by using plasma, and a storage medium storing a program for executing the method. Background technique [0002] As one of the methods for achieving high integration of semiconductor devices, there is a technique of multilayer wiring. In order to form a multilayer wiring structure, it is necessary to connect adjacent wiring layers with a conductive layer, and to connect the wiring layers other than the conductive layer. The regions are insulated with an interlayer insulating film. Conventionally, SiO has been frequently used as this type of interlayer insulating film. 2 However, recently, from the viewpoint of miniaturization and high speed of semiconductor devices, in order to reduce the capacitance between wirings, the dielectric constant of the interlayer insulating film is tending to be lowered. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/304H01L21/768H01L23/522
CPCH01L21/31122H01L21/76808H01L21/02307H01L23/53295H01L2924/0002H01L21/76802H01L21/31144H01J37/32091H01L21/3105H01L21/0273H01L21/76814H01L21/31116H01L23/53238H01L21/02063H01L2924/00
Inventor 野沢俊久宫谷光太郎堀寿靖广瀬繁和
Owner TOKYO ELECTRON LTD
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