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Semiconductor laser and manufacturing method therefor

一种制造方法、半导体的技术，应用在半导体激光器、激光器、激光器零部件等方向，能够解决成品率下降、不能正常地生长、半导体激光器特性降低等问题，达到好漏电流的效果

Inactive Publication Date: 2009-12-02
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Growth of other semiconductor layers on the oxidized semi-insulating Fe-doped Al(Ga)InAs layer cannot grow normally, resulting in defects or surface unevenness
As a result, there is a problem that the characteristics of the semiconductor laser are lowered and the yield is lowered.

Method used

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  • Semiconductor laser and manufacturing method therefor
  • Semiconductor laser and manufacturing method therefor
  • Semiconductor laser and manufacturing method therefor

Examples

Experimental program
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Embodiment approach 1

[0029] figure 1 is a cross-sectional view showing the semiconductor laser according to Embodiment 1 of the present invention. A ridge structure 18 is formed on a p-type InP substrate 10 (semiconductor substrate), and the ridge structure 18 is a p-type InP cladding layer 12 (p-type cladding layer), an AlGaInAs strained quantum well (strained quantumwell) active layer 14 ( active layer) and n-type InP cladding layer 16 (n-type cladding layer). Here, the carrier concentration of the p-type InP cladding layer 12 is 1×10 18 cm -3 , the carrier concentration of the n-type InP cladding layer 16 is 1×10 18 cm -3 .

[0030] Both sides of the ridge structure 18 are buried with the buried layer 20 . The buried layer 20 has a p-type InP layer 22 , an n-type InP layer 24 , a low-carrier-concentration p-type InP layer 26 , and a p-type InP layer 28 in this order from below. Low carrier concentration p-type InP layer 26 (p-type semiconductor layer) and n-type InP layer 24 (n-type semi...

Embodiment approach 2

[0040] image 3 It is a cross-sectional view showing a semiconductor laser according to Embodiment 2 of the present invention. A low carrier concentration n-type InP layer 44 is provided instead of the low carrier concentration p-type InP layer 26 . The carrier concentration of the low carrier concentration n-type InP layer 44 is 1×10 17 cm -3 . The p-type InP layer 28 (p-type semiconductor layer) and the low carrier concentration n-type InP layer 44 (n-type semiconductor layer) constitute a pn junction 46 . Other structures are the same as those in Embodiment 1.

[0041] In the semiconductor laser of this embodiment mode, the low carrier concentration n-type InP layer 44 is inserted, and the n-type carrier concentration of the pn junction 46 is changed from the conventional 1×10 19 cm -3 Reduced to 1×10 17 cm -3 . Therefore, the capacitance C of the pn junction 46 can be reduced to 0.9 pF, and the cutoff frequency fc is 22 GHz, so high-speed modulation of 10 Gbps or ...

Embodiment approach 3

[0043] Figure 4 It is a cross-sectional view showing a semiconductor laser according to Embodiment 3 of the present invention. The conductivity type of the substrate is different from that of the first embodiment.

[0044] On n-type InP substrate 50 (semiconductor substrate), form ridge structure 18, and this ridge structure 18 is to n-type InP cladding layer 52 (n-type cladding layer), AlGaInAs strained quantum well active layer 54 (active layer) and The p-type InP cladding layer 56 (p-type cladding layer) is laminated. Here, the carrier concentration of the n-type InP cladding layer 52 is 1×10 18 cm -3 , the carrier concentration of the p-type InP cladding layer 56 is 1×10 18 cm -3 .

[0045] Both sides of the ridge structure 18 are buried with the buried layer 20 . The buried layer 20 has a p-type InP layer 58 , a low carrier concentration p-type InP layer 60 , an n-type InP layer 62 , and a p-type InP layer 64 in order from below. Low carrier concentration p-type ...

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Abstract

The present invention relates to a semiconductor laser and a manufacturing method therefor. The semiconductor laser can carry out high speed confection more than 10 Gbps, which comprises: a ridge structure (18) including a p-type InP cladding layer (12) (a p-type cladding layer), an AlGaInAs strained quantum well an active layer (14) (an active layer), and an n-type InP cladding layer (16) (an n-type cladding layer) stacked on one another; and a burying layer (20) burying sides of the ridge structure (18). The burying layer (20) includes a p-type InP layer (26) (a p-type semiconductor layer) and an n-type InP layer (24) (an n-type semiconductor layer) that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5x10cm or less near the pn junction.

Description

technical field [0001] The present invention relates to an embedded semiconductor laser in which both sides of a ridge structure are embedded with an embedded layer and a method for manufacturing the same. Background technique [0002] As the buried layer of the buried type semiconductor laser, a structure having a pn junction or a structure having a semi-insulating InP layer has been proposed. Also, in order to suppress leakage current in a buried layer having a semi-insulating InP layer, a semiconductor laser in which a semi-insulating Al(Ga)InAs layer is further provided on the buried layer has been proposed (for example, see Patent Document 1). [0003] Patent Document 1: JP-A-8-255950 [0004] Recently, laser semiconductors used for high-speed modulation of 10 Gbps or higher have been widely demanded. However, in a conventional laser having a buried layer including a pn junction, the capacitance of the pn junction in the buried layer becomes large, and high-speed modu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00H01S5/343
CPCH01S5/2226H01S5/2222H01S5/227H01S5/2275
Inventor 泷口透奥贯雄一郎境野刚
Owner MITSUBISHI ELECTRIC CORP
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