Thin film transistor

Abstract

The invention relates to a thin film transistor, comprising a source electrode, a leakage electrode, a semiconductor layer and a grid electrode. The leakage electrode and the source electrode at intervals; the grid electrode, the semiconductor layer, the source electrode and the leakage electrode are arranged in an insulating way through an insulating layer, wherein the semiconductor layer comprises a plurality of carbon nano tubes, and two ends of at least part of the carbon nano tubes are electrically connected with the source electrode and the leakage electrode respectively.

Description

technical field [0001] The invention relates to a thin film transistor, in particular to a thin film transistor based on carbon nanotubes. Background technique [0002] Thin Film Transistor (TFT) is a key electronic component in modern microelectronics technology, and has been widely used in fields such as flat panel displays. A thin film transistor mainly includes a gate, an insulating layer, a semiconductor layer, a source and a drain. Wherein, the source and the drain are arranged at intervals and electrically connected with the semiconductor layer, and the gate is insulated from the semiconductor layer and the source and the drain through the insulating layer. A region of the semiconductor layer between the source and the drain forms a channel region. The gate, source, and drain in the thin film transistor are all made of conductive materials, and the conductive materials are generally metals or alloys. When a voltage is applied to the gate, the channel region in the ...

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Problems solved by technology

Since carbon nanotubes have good carrier axial transport properties, but poor radial transport properties, carbon nanotubes arranged perpendicular to the substrate direction are also unfavorable for obtaining thin films with high carrier mobility. transistor

Therefore, the above two arrangements of carbon nanotubes cannot effectively utilize the high carrier mobility of carbon nanotubes.

Therefore, thin film transistors using disordered carbon nanotube layers or carbon nanotube arrays as semiconductor layers in the prior art are not conducive to obtaining thin film transistors with higher carrier mobility and higher response speed, and in the prior art The thin film transistors are less flexible

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