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Crystal growing device and method

A technology of crystal growth and crystal growth furnace, which is applied in the field of compound systems, and can solve the problems of reduced total length and low yield of grown crystals

Inactive Publication Date: 2009-10-14
AXT INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Reduced total length of grown crystals resulting in lower yields

Method used

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  • Crystal growing device and method
  • Crystal growing device and method
  • Crystal growing device and method

Examples

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Embodiment Construction

[0012] The present invention will be explained in detail below with reference to the examples shown in the accompanying drawings. The embodiments mentioned in the following description do not represent all embodiments consistent with the claimed invention. Rather, they are merely examples of certain aspects consistent with the invention. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0013] The apparatus and method are particularly suitable for gallium arsenide (GaAs) crystal growth and will be described in this context herein. However, it should be understood that the apparatus and method can also be used to manufacture other III-V, II-VI and related single crystal compounds, so it has broader applications.

[0014] figure 1 is a cross-sectional view of an example of a crystal growth apparatus 20 . The apparatus includes a crucible frame 22 in a furnace 24, such as a furnace that establishes a cryst...

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Abstract

The invention discloses a system and a method using VGF and VB growing technology to carry out crystal growth to reduce body inlaid crystal. In a demonstration embodiment, an ampoule bottle containing a raw material is inserted into a furnace with a heating resource, and a vertical gradient solidifying technology is used for crystal growth, wherein the crystallizing temperature gradient can move corresponding to the crystal and / or the furnace to melt the raw material and convert the raw material into monocrystal compound; and a vertical Bridgman technology is used for crystal growth on a crucible, wherein the ampoule bottle / heating source can relatively move to continuously melt the raw material and convert the raw material into monocrystal compound.

Description

technical field [0001] The present invention generally relates to systems and methods for the growth of III-V, II-VI and related single crystal compounds, and more particularly to systems and methods for growing such compounds with reduced body lineage. Background technique [0002] Manufacturers of electronic and optoelectronic devices often require commercially grown, large-area, uniform individual semiconductor crystals that can be sliced ​​and polished to serve as substrates for the fabrication of microelectronic devices. The growth of semiconductor crystals involves heating the polycrystalline raw material to its melting point (typically in excess of 1200°C) to form a melt of the polycrystalline raw material, bringing the melt into contact with high-quality seed crystals so that the melt crystallizes upon contact with the seed crystals . The crystallization of the melt forms substantially cylindrical crystals (boules) along the vertical axis, with the seed crystals loc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00F27B14/04F27B14/06
CPCC30B29/42C30B11/007C30B35/00C30B11/002C30B11/003Y10T117/1032Y10T117/1056Y10T117/1068
Inventor W·刘G·A·艾里奥特
Owner AXT INC
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