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Large-aperture thin-wall anodized aluminum film and preparation method thereof

An anodized aluminum, anodic oxidation technology, applied in the direction of anodic oxidation, electrolytic coating, surface reaction electrolytic coating, etc., can solve the problems of only 30-70nm, filled with other substances, etc.

Inactive Publication Date: 2009-10-14
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Using phosphoric acid as the electrolyte can obtain an aluminum oxide film with a larger pore size. Patent CN 1403632A uses a mixed acid solution of phosphoric acid and an organic acid as the electrolyte to obtain an anodized aluminum oxide film with a larger pore size through anodic oxidation at a constant voltage. The pore size is only 30-70nm
[0004] In addition, thicker pore walls are usually obtained during anodic oxidation. The aluminum oxide film prepared by patent CN 101139730 has a pore diameter of 30-35nm, but the pore spacing has reached 80-100nm, which means that the thickness of the pore wall is greater than the pore diameter. This will hinder the filling of other substances in the pores

Method used

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  • Large-aperture thin-wall anodized aluminum film and preparation method thereof
  • Large-aperture thin-wall anodized aluminum film and preparation method thereof
  • Large-aperture thin-wall anodized aluminum film and preparation method thereof

Examples

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Embodiment 1

[0017] The aluminum flakes are first ultrasonically cleaned with acetone, ethanol, and high-purity water for 10 minutes to remove surface grease and dirt; the cleaned aluminum flakes are placed in a 5% sodium hydroxide solution for 30 minutes to remove the aluminum flakes. oxide layer on the surface. Put the prepared aluminum sheet into a 1% phosphoric acid solution by mass percentage for anodic oxidation: first anodize at a high voltage of 160 volts for 3 minutes, then reduce the voltage to 120 volts, and continue anodizing for 1 hour.

[0018] The product obtained in this embodiment is a thin-walled anodic aluminum oxide film with large pores.

[0019] figure 1 Shown is the scanning electron microscope picture of the large-aperture thin-walled anodized aluminum produced in this example. The anodized aluminum in the picture has a pore diameter of 250-300 nm and a pore wall thickness of 14-20 nm.

Embodiment 2

[0021] The aluminum flakes are first ultrasonically cleaned with acetone, ethanol, and high-purity water for 10 minutes to remove surface grease and dirt; the cleaned aluminum flakes are placed in a 5% sodium hydroxide solution for 30 minutes to remove the aluminum flakes. oxide layer on the surface. Put the prepared aluminum sheet into a 1% phosphoric acid solution by mass percentage for anodic oxidation: during anodic oxidation, the concentration of phosphoric acid is 1%, anodic oxidation is performed at a high voltage of 160 volts for 5 minutes, and then the voltage is reduced to 40 volts , continue anodizing for 10 hours.

[0022] The product obtained in this embodiment is a thin-walled anodic aluminum oxide film with large pores.

Embodiment 3

[0024] The aluminum flakes are first ultrasonically cleaned with acetone, ethanol, and high-purity water for 10 minutes to remove surface grease and dirt; the cleaned aluminum flakes are placed in a 5% sodium hydroxide solution for 30 minutes to remove the aluminum flakes. Oxidation layer on the surface; the aluminum sheet that is put into mass percentage is that 2% phosphoric acid solution, carry out anodic oxidation: at first under the high voltage of 120 volts anodic oxidation 30 minutes, then reduce voltage to 80 volts, continue anodic oxidation 5 Hour.

[0025] The product obtained in this embodiment is a thin-walled anodic aluminum oxide film with large pores.

[0026] figure 2 Shown is the scanning electron microscope picture of the large-aperture thin-walled anodized aluminum prepared in this example. The anodized aluminum in the picture has a pore diameter of 240-250 nm and a pore wall thickness of 5-13 nm.

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Abstract

A large-aperture thin-wall anodized aluminum film is characterized by 200-300 nanometers of aperture and 5-20 nanometers of wall thickness. The preparation method of the film comprises the steps of: ultrasonic washing an aluminum sheet for 10 minutes sequentially by using acetone, ethanol and high purity water to remove superficial lipin and smudge; placing the washed aluminum sheet in 5 mass percent of sodium hydroxide solution for reacting for 30 minutes to remove oxide layers on the surface of the aluminum sheet; then placing the aluminum sheet obtained from step (1) in 1-10 mass percent of phosphoric acid solution, anodizing for 1 minute to 1 hour under 40-160V of voltage, later lowering the voltage to be 10-120V and continuously anodizing for 10 minutes to 10 hours, and finally finishing the preparation of the large-aperture thin-wall anodized aluminum film.

Description

technical field [0001] The invention relates to an anodized aluminum oxide film and a preparation method thereof, in particular to a large-aperture thin-wall anodized aluminum oxide film and a preparation method thereof. Background technique [0002] Anodic oxidation of aluminum and its alloys in sulfuric acid, oxalic acid, phosphoric acid and other electrolytes can form an aluminum oxide film with a porous structure on the surface, and filling different substances in its micropores can obtain various surface composite materials to improve Surface properties of aluminum and aluminum alloy materials, or used to prepare one-dimensional nanomaterials or nanoarrays. At present, the electrolytes used in anodizing at home and abroad are mainly sulfuric acid solution and oxalic acid solution, and the pore size of the anodized aluminum film produced is small, only a few nanometers to tens of nanometers. [0003] Using phosphoric acid as the electrolyte can obtain an aluminum oxide ...

Claims

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Application Information

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IPC IPC(8): C25D11/04C25D11/16C25D11/08
Inventor 刘敏赵雷王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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