Physical gas-phase deposition chamber gastightness detecting method

A technology of physical vapor deposition and air tightness detection, which is applied in the direction of liquid tightness measurement using liquid/vacuum degree and fluid tightness testing with electrical device, which can solve the change of PVD deposition chamber environment and production conditions, etc. problems, to achieve the effect of reducing the number and reducing the cost

Inactive Publication Date: 2010-09-29
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0008] Although the above method can be used to detect abnormal operation of the PVD deposition chamber in time, after the gas discharge in the vacuum is excited, it is easy to cause changes in the environment in the PVD deposition chamber, that is, it is easy to cause changes in production conditions.

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  • Physical gas-phase deposition chamber gastightness detecting method
  • Physical gas-phase deposition chamber gastightness detecting method
  • Physical gas-phase deposition chamber gastightness detecting method

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[0041] Such as figure 2 As shown, as the first embodiment of the present invention, the specific steps of applying the method provided by the present invention to detect the airtightness of the PVD deposition chamber include:

[0042] Step 21: Run the first control panel, the running time of the first control panel is greater than or equal to the detection reaction time.

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Abstract

The invention relates to a method for detecting the air tightness of a physical vapor deposition and sedimentation cavity, which comprises the following steps: a first control wafer runs, and the running time of the first control wafer is more than or equal to detecting reaction time; physical vapor deposition is carried out on a second control wafer; the resistance value of the second control wafer is detected; when the resistance value of the second control wafer conforms to a detecting standard, the air tightness of the physical vapor deposition and sedimentation cavity meets product requirements; when the resistance value of the second control wafer is more than the detecting standard, the air tightness of the physical vapor deposition and sedimentation cavity does not meet the product requirements. The method can timely detect abnormal situations of the physical vapor deposition and sedimentation cavity after running, thus being good for shooting trouble, so as to reduce the quantity of production when the physical vapor deposition and sedimentation cavity is at abnormal state, while not changing the environment in the physical vapor deposition and sedimentation cavity.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for detecting air tightness of a physical vapor deposition deposition chamber. Background technique [0002] Currently, traditional metallization processes used in semiconductor manufacturing, including evaporation, sputtering, and electroplating, are all subsumed into physical vapor deposition (PVD). In order to maintain the purity of the deposited film, the vacuum in the PVD deposition chamber is an important parameter in the PVD process. When empty, the vacuum in the PVD deposition chamber is typically 10 -9 T; during operation, the vacuum in the PVD deposition chamber is typically 10 -2 T; however, usually when the PVD deposition chamber starts to operate or after a period of operation, such as 24 hours, the operation of the PVD deposition chamber needs to be detected. [0003] The air tightness test of the PVD deposition chamber is an importan...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01M3/40G01M3/02
Inventor 聂佳相苏娜胡宇慧
Owner SEMICON MFG INT (SHANGHAI) CORP
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