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Polycrystalline silicon manufacturing apparatus and manufacturing method

A technology for manufacturing equipment and manufacturing methods, applied in the field of polysilicon manufacturing equipment, capable of solving problems such as supplying raw material gas, falling down, and swinging silicon core rods

Active Publication Date: 2009-06-03
HIGH PURITY SILICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, if the number of silicon core rods increases and becomes dense, it will be difficult to stably supply the raw material gas to the surface of each silicon core rod, and the silicon core rods will swing and fall due to the disturbance of the flow of the raw material gas.

Method used

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  • Polycrystalline silicon manufacturing apparatus and manufacturing method
  • Polycrystalline silicon manufacturing apparatus and manufacturing method
  • Polycrystalline silicon manufacturing apparatus and manufacturing method

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Embodiment Construction

[0044] Hereinafter, embodiments of the polysilicon manufacturing apparatus and manufacturing method of the present invention will be described with reference to the drawings.

[0045] figure 1 It is an overall view of a polycrystalline silicon manufacturing apparatus using the present invention. The reaction furnace 1 of the polycrystalline silicon manufacturing apparatus includes: a base 2 constituting the bottom of the furnace; and a bell-shaped cover 3 detachably attached to the base 2 .

[0046] like figure 1 As shown, a plurality of the following components are respectively arranged on the base 2: a plurality of pairs of electrodes 5 are installed with a silicon core rod 4 which becomes a seed rod of polysilicon generated; an ejection nozzle 6 is used to inject chlorosilane gas and The raw material gas of hydrogen is sprayed into the furnace; the gas outlet 7 is used to discharge the reacted gas to the outside of the furnace.

[0047] In addition, the ejection nozzles 6 ...

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Abstract

There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports (6A) for ejecting raw gas upward in a reactor (1) and gas exhausting ports (7) for exhausting exhaust gas after a reaction are provided on an inner bottom of the reactor (1) in which a plurality of silicon seed rods (4) are stood, the silicon seed rods (4) are heated and the polycrystalline silicon is deposited from the raw gas on the surfaces. The apparatus includes gas distributing tubes (9) that are respectively connected to the gas supplying ports (6A) and respectively supply the raw gas to the gas supplying ports (6A), valves (21) that are provided on at least the gas distributing tubes connected to the gas supplying ports (6A) adjacent to a center of the reactor (1) and open or close conduit lines of the gas distributing tubes (9), and a valve controlling device (22) that is connected to the valves (21) and controls the conduit lines to be closed for a predetermined time at an early stage of the reaction.

Description

technical field [0001] The present invention relates to a polysilicon manufacturing apparatus and method for producing polysilicon rods by depositing polysilicon on the surface of a heated silicon core rod. Background technique [0002] As such a polycrystalline silicon manufacturing apparatus, a manufacturing apparatus based on the Siemens method is known. In this polysilicon production apparatus, a plurality of seed crystals made of silicon core rods are arranged and heated in a reaction furnace, and a raw material gas composed of a mixed gas of chlorosilane gas and hydrogen gas is supplied to the reaction furnace, and the raw material The gas comes into contact with the heated silicon rod to precipitate polysilicon. [0003] In such a polysilicon manufacturing apparatus, silicon core rods serving as seed crystals are fixed to electrodes provided on the inner bottom of the reaction furnace in an upright state, and the upper ends of the silicon core rods are connected in p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
CPCC01B33/035H01L21/20
Inventor 远藤俊秀手计昌之石井敏由记坂口昌晃畠山直纪
Owner HIGH PURITY SILICON CO LTD
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