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Grounding loop structure of radio frequency CMOS integration inductance

A technology that integrates inductors and grounding rings. It is applied to circuits, electrical components, and electric solid devices to prevent magnetic energy loss and ensure the Q value of inductors.

Active Publication Date: 2010-09-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a grounding ring structure in a radio frequency CMOS integrated inductor. On the one hand, it is to solve the substrate noise caused by the operation of the radio frequency inductor; on the other hand, it is to reduce the noise caused by the conventional grounding ring. The large eddy current effect leads to the dissipation of electromagnetic energy, thus ensuring a certain RF integrated inductor Q value while reducing the influence of substrate noise

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  • Grounding loop structure of radio frequency CMOS integration inductance
  • Grounding loop structure of radio frequency CMOS integration inductance
  • Grounding loop structure of radio frequency CMOS integration inductance

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Embodiment Construction

[0013] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0014] As shown in Figure 1, the present invention proposes a ground ring structure in a novel radio frequency CMOS integrated inductor, that is, by disconnecting the ground ring active area and its upper layer metal (Metal1, the first layer of metal), so that the surrounding area of ​​the inductor It is impossible to form a closed loop to reduce the loss of magnetic field energy on the ground ring and avoid a significant drop in Q value.

[0015] As shown in Figure 3, the grounding ring structure in a radio frequency CMOS integrated inductor of the present invention, the opening of the grounding ring (that is, the opening of the grounding ring active area and the opening of the first layer of metal) and the direction of the opening of the inductor can be the same Or vice versa, for example, the ground ring opening in Figure 3(a) is in the opp...

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Abstract

The invention discloses an earthing ring structure in a radio frequency CMOS integrated inductor. The earthing ring consists of an active area and a first layer of metal, wherein the active area and the first layer of metal are disconnected so as to form a disconnected opening of the earthing ring. The earthing ring structure makes the periphery of the inductor not form a closed circuit through disconnecting the active area and the upper connected metal of the earthing ring so as to reduce consumption of energy of a magnetic field on the earthing ring, thereby avoiding substantial descending of Q value. The earthing ring structure ensures a certain Q value without increasing area of the inductor or extra manufacturing cost on the premise that anti-noise capability is improved.

Description

technical field [0001] The invention relates to a structure of a radio frequency inductance element model, in particular to a grounding ring structure in a radio frequency CMOS integrated inductance. Background technique [0002] RF CMOS (Complementary Metal Oxide Semiconductor) integrated inductor is one of the important components of RF CMOS integrated circuits, and its substrate is susceptible to noise interference that affects the performance of the entire circuit. Introducing the ground ring into the integrated inductor model can effectively improve the anti-noise ability of the integrated inductor. [0003] Most of the grounding rings used in the currently applied RF component libraries are closed rings. According to Ampere's law, the magnetic field of the integrated inductor will induce current on the closed ground ring, causing a part of energy loss on the ground ring, thereby reducing its inductance Q value (quality factor). Q=2π*energy storage / energy dissipation....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 蔡描
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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