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Preparation of AZO target material for thin-film solar cell

A solar cell, zinc-aluminum oxide technology, applied in metal material coating process, ion implantation plating, coating and other directions, to achieve the effects of good uniformity, easy doping, and cost-effectiveness

Inactive Publication Date: 2010-08-11
河北东同光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, my country's research in this area is mainly concentrated in scientific research institutions and colleges and universities, and is still in the stage of experimental development.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Add zinc acetate with a purity of 99.0% and aluminum nitrate with a purity of 99.1% to a stirred reactor, add water to dissolve it, add NaOH to adjust the pH to 7.0, and perform liquid phase conversion at 140°C for 2 hours to produce zinc oxide The aluminum is precipitated, filtered, dehydrated and dried to form a powder, and sintered at 500°C for 2 hours to obtain a zinc-aluminum oxide powder with an alumina content of 2.5%. The powder was sintered at 1300° C. for 3 hours under a vacuum of 1 Pa and a pressure of 50 MPa to make a ZAO target with a relative density of 98%. The resistivity of the ZAO thin film prepared by magnetron sputtering deposition using this target is 9.7×10 -4 Ω·cm, the visible light transmittance is 85%.

Embodiment 2

[0017] Add zinc nitrate with a purity of 99.1% and aluminum nitrate with a purity of 99.3% into a stirred reactor, then add water to dissolve it, add NaOH to adjust the pH to 8.5, and perform liquid phase conversion at 95°C for 1 hour to produce zinc and aluminum oxide Precipitated, filtered, dehydrated and dried to form a powder, and sintered at 400°C for 2 hours to obtain a zinc-aluminum oxide powder with an alumina content of 3.0%. The powder was sintered at 1200° C. for 5 hours under a vacuum degree of 50 Pa and a pressure of 50 MPa to make a ZAO target material with a relative density of 96%. The resistivity of the ZAO thin film prepared by magnetron sputtering deposition using this target is 5.8×10 -4 Ω·cm, the visible light transmittance is 89%.

Embodiment 3

[0019] Add zinc acetate with a purity of 99.3% and aluminum nitrate with a purity of 99.1% into a stirred reactor, then add water to dissolve it, add NaOH to adjust the pH to 8.0, and perform liquid phase conversion at 120°C for 2 hours to produce zinc oxide The aluminum is precipitated, filtered, dehydrated and dried to make a powder, and sintered at 550°C for an hour to obtain a zinc-aluminum oxide powder with an alumina content of 3.5%. The powder was sintered at 1350° C. for 2.5 hours in a vacuum of 30 Pa and a pressure of 100 MPa to make a ZAO target with a relative density of 99%. The resistivity of the ZAO thin film prepared by magnetron sputtering deposition using this target is 1.2×10 -4 Ω·cm, the visible light transmittance is 94%.

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Abstract

The invention relates to a method for preparing an aluminum zinc oxide target material for a film solar cell. The method comprises the following steps: (1) zinc salt and aluminum salt are used as raw materials, added with pure water and dissolved; the PH value of the solution is regulated between 7.0 and 10.5; under the hydrothermal condition, temperature is controlled between 90 and 140 DEG C; and the reaction time is between 1.0 and 2.0 hours; (2) the solution is filtered in order to separate a product from a mother solution; the product is washed by pure water and is dried to obtain an aluminum zinc oxide powder body; (3) the obtained powder body is calcined for 2 hours at temperature of between 400 and 550 DEG C; and (4) the powder body obtained in the step (3) is put into a vacuum hot-pressing furnace, vacuumized to 1 to 100Pa, pressurized to between 50 and 100 MPa, slowly heated, kept at the temperature of between 1,200 and 1,400 DEG C, sintered for 2 to 5 hours and slowly cooled to prepare the aluminum zinc oxide (ZAO) target material with relative density not less than 95 percent. The prepared target material is used for plating a film, has economic manufacturing cost and no toxicity and is easy to realize adulteration; a ZAO thin film has good stability in plasma, is a product for substituting ITO and can be widely applied in the field of manufacturing a solar transparent electrode.

Description

technical field [0001] The invention relates to a method for preparing zinc-aluminum oxide (AZO) targets used in thin-film solar cells, in particular to a method for directly synthesizing zinc-aluminum oxide powders in liquid phases using zinc salts and aluminum salts to obtain zinc oxide powders suitable for the production of zinc oxide The invention discloses a method for raw materials of aluminum ceramic target materials, which belongs to the technical field of photoelectric material preparation. Background technique [0002] With the rapid development of the solar cell industry, the demand for ceramic targets continues to increase. Traditional thin-film solar cells mainly use indium tin oxide (ITO) targets, which have mature technology and stable products. However, because indium is a toxic metal, and the earth reserves are very small and the price is high, its development is restricted. In this case, people began to shift the focus of research to zinc aluminum oxide, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/34
Inventor 康明生魏雨张德丰马键凯种景顺岳学军武喜红
Owner 河北东同光电科技有限公司
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