Semiconductor light emitting element

Abstract

In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active layer (230) is lambada, and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA >= lambada / n. In formula 1, L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J 0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, gamma is diode ideality factor, kappa is Boltzmann constant, rho is specific resistance of the n-type semiconductor layer.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting element having a semiconductor layer. Background technique [0002] Heretofore, a semiconductor light-emitting element having a structure in which a plurality of semiconductor layers including GaN are stacked on a sapphire substrate has been proposed (eg, Patent Document 1). [0003] In addition, as one method of manufacturing a semiconductor light-emitting element, it is known to form a semiconductor layer on a sapphire substrate, bond a support substrate to a portion of the semiconductor layer on the opposite side of the sapphire substrate, and heat by a laser. A method of peeling off the above-mentioned sapphire substrate (for example, refer to Patent Document 2). Figure 20 An example of a semiconductor light-emitting element manufactured by this manufacturing method is shown. The semiconductor light-emitting element X shown in the figure is structured such that a p-GaN layer 92, an a...

AI Technical Summary

Problems solved by technology

Therefore, in the semiconductor light-emitting element X, the proportion of the light that can be properly emitted in the light emitted by the active layer 93 is very small, which hinders the improvement of brightness.

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