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Mask target and method for forming the same

A technology for aligning marks and grooves, applied to electrical components, electrical solid devices, circuits, etc., can solve the problems of difficult alignment and difficult acquisition of alignment signals, easy to achieve optical signals, and solve the problem of decreased or impossible alignment accuracy alignment effect

Inactive Publication Date: 2009-02-25
HEJIAN TECH SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a new alignment mark and its forming method, which can solve the problems of difficult alignment and difficult acquisition of alignment signals, and improve the accuracy of alignment

Method used

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  • Mask target and method for forming the same
  • Mask target and method for forming the same
  • Mask target and method for forming the same

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Embodiment Construction

[0021] A new alignment mark of the contact window layer according to the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0022] Figure 2A with 2B For the first step of the alignment mark in a preferred embodiment of the present invention, the field oxide layer 22 on the single crystal silicon substrate 21 is photolithographically or etched using the active layer mask 31, and the alignment mark is placed on the scribe line area begins to etch, forming a trench, shaped like Figure 2B As shown, in this embodiment, the thickness of the field oxide layer 22 is 1 μm. Of course, the thickness of the field oxide layer, the number and shape of trenches can be arbitrary, and are not limited by this embodiment.

[0023] Figure 3A with 3B For the second step of the alignment mark of a preferred embodiment of the present invention, first add a gate polysilicon layer 23 on the field oxide layer 22, an...

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Abstract

The invention provides an alignment mark and a forming method thereof. The method comprises the following steps: forming a field oxide layer, a grid polysilicon layer and a metal antemedium layer in sequence on a substrate; forming communicated trenches in sequence on the field oxide layer, the grid polysilicon layer and the metal antemedium layer; and taking the stacked multi-layer trenches as the alignment mark. The alignment mark and the forming method enable the trench depth of the alignment mark of the metal antemedium layer to be deepened, and enable the acquisition of optical signals of the alignment mark to be easier when photoetching is conducted, thereby solving the problem that the alignment precision is reduced or alignment can not be realized because the alignment mark is too shallow.

Description

technical field [0001] The invention relates to the technical field of transistor manufacturing methods, in particular to a novel alignment mark of a contact window layer and a forming method thereof. Background technique [0002] Ordinary contact window layer alignment marks are made on the active area of ​​the scribe line, and grooves are formed on the pre-metal dielectric layer to form alignment marks by photolithography and etching of the contact window layer. During photolithographic alignment of the metal layer on the crystal plane, the photolithographic alignment machine achieves the purpose of alignment by obtaining the optical signal of the alignment mark of the contact window layer. Such as figure 1 As shown, the formation of the alignment mark of the contact layer in the known technology is on the pre-metal dielectric layer 12 on the single crystal silicon substrate 11 in the dicing line region, and the photolithography and etching field metal pre-dielectric laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544H01L21/00
Inventor 石亮黄清俊王雪丹施晓东武斌
Owner HEJIAN TECH SUZHOU
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