Non-volatile memory and operating method thereof

Abstract

A non-volatile memory and an operating method thereof are disclosed. The non-volatile memory includes a memory cell array, a first dummy cell array, an address decoding unit and a synchronous programming circuit. The memory cell array includes a first memory cell, and the first dummy cell array includes a first dummy cell. The first dummy cell is adjacent to a first side of a memory cell array and corresponds to the first memory cell. The address decoding unit receives an address signal for decoding. When the address signal is a relative address of the first dummy cell, the synchronous programming circuit controls the first dummy cell and the first memory cell to be synchronously programmed.

Description

technical field [0001] The present invention relates to the technical field of non-volatile memory, relates to a non-volatile memory and its operating method, and in particular to a non-volatile memory which improves over-erasing phenomenon and its operating method. Background technique [0002] Current electronic components usually use non-volatile memories to store a large amount of data. In order to be able to process and store this information, the non-volatile memory must have the ability to program or erase the memory cell array in the flash memory. [0003] Please refer to FIG. 1 , which is a schematic diagram of a traditional non-volatile memory. The conventional nonvolatile memory 10 includes a memory cell array 110 , a dummy cell array 122 , word lines 160 and bit lines 150 . The dummy cell array 122 is disposed on both sides of the edge of the memory cell array 110 , and the memory cell array 110 and the dummy cell array 122 are composed of the memory cell 1122 ...

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Problems solved by technology

[0005] However, since the virtual unit 1222 adjacent to the storage unit 1122 is in the state of being erased for a long time, it will cause the phenomenon of over erasing.

When the over-erasing phenomenon occurs, bit line to bit line current leakage Ileak (bit line to bit line current leakage) will flow through the dummy unit 1222 adjacent to the memory unit 1122, thereby affecting the non-volatile memory during reading. read result

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