Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Common frequency iso-mode whirling traveling-wave klystron amplifier

A technology for amplifiers and klystrons, applied in klystrons, electron tubes with speed/density modulation electron flow, discharge tubes, etc., can solve the problems of phase lock and communication applications, and achieve the effect of increasing device power

Inactive Publication Date: 2010-07-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the frequency multiplication method is completely nonlinear and the phase cannot be locked, so it cannot be applied to some communication applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Common frequency iso-mode whirling traveling-wave klystron amplifier
  • Common frequency iso-mode whirling traveling-wave klystron amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0018] Such as figure 1 As shown, the same-frequency and different-mode cyclotron traveling-wave klystron consists of an electron injection channel 1, an input cavity 2, a drift section I3, a cluster cavity 4, a drift section II5, a lossy dielectric layer 6, a traveling-wave amplification section 7, and an output tapered waveguide 8 , the output uniform waveguide is composed of 9 parts, the electron injection channel 1 is connected to the input cavity 2, the input cavity 2 is connected to the drift section I3, the drift section I3 is connected to the cluster cavity 4, the cluster cavity 4 is connected to the drift section II5, and the drift section II5 is connected to the traveling wave amplification section 7, the traveling wave amplification section 7 is connected to the output tapered waveguide 8, the output tapered waveguide 8 is connected to the output uniform waveguide 9, and the lossy dielectric layer is installed on the left waveguide wall of the traveling wave amplific...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a same frequency heterotypical cyclotron traveling wave klystron amplifier which is characterized by comprising an input cavity, no or a plurality of bunching cavities, one or more drift segments and a traveling wave amplification segment. The input cavity, the bunching cavities and the traveling wave amplification segment are respectively connected with drift segments to form a whole. The input cavity, the bunching cavities and the traveling wave amplification segment of the same frequency heterotypical cyclotron traveling wave klystron amplifier work at the same harmonic and the same frequency, with the same working waveguide mode angular orientation index. The input cavity, the bunching cavities of the same frequency heterotypical cyclotron traveling wave klystron amplifier work under the same waveguide mode with lower order, while the traveling wave amplification segment work under the waveguide mode with higher order than the input cavity.

Description

technical field [0001] The invention relates to a gyrotwystron amplifier (gyrotwystron) with the same frequency and different modes, belonging to the technical field of high-power millimeter wave sources. Background technique [0002] High-power millimeter-wave radar has very important application prospects in national defense fields such as high-resolution radar imaging, anti-stealth, anti-low-altitude flying targets, anti-sea-skimming missiles, missile defense, and electronic countermeasures. Civilian fields such as high-energy physics also have good application prospects. To develop high-power millimeter-wave radar, it is necessary to develop a high-power millimeter-wave source first. Traditional vacuum electronic devices have encountered great difficulties in the millimeter-wave frequency band. And the gyrotron (1.Twiss R.Q., Roberts J.A.Electromagnetic radiation from electrons rotating in an ionized medium under the action of a uniform magnetic field.Aust.J.Phys.1958,1...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J25/00H01J25/10
Inventor 黄勇李宏福
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com