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Gas-sensitive sensor

A gas sensor and gas-sensitive technology, which is applied in the field of gas sensors, can solve the problems of increasing device power consumption, increasing device lead-out lines, manufacturing complexity, and lack of devices, so as to reduce device power consumption, simplify device design and The effect of manufacturing complexity and reducing manufacturing cost

Active Publication Date: 2012-01-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0007] The biggest problem with this structure is that the device is not thermally insulated from the surroundings, causing heat to diffuse to the surroundings through the electrical insulation layer, increasing the power consumption of the device
Moreover, the method of separately manufacturing the temperature measuring electrode and the heating electrode increases the complexity of the device lead-out line and manufacturing.

Method used

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Embodiment

[0039] Refer again figure 2 , 3 , 4 and 5, the device is mainly composed of silicon substrate (1), silicon dioxide / silicon nitride layer (2), silicon dioxide electrical insulating layer (3), silicon nitride electrical insulating layer (4), silicon dioxide Layer (5), Au / Cr layer (6) of interdigitated electrode leads, Au / Cr layer (7) of heating and temperature measuring electrodes, Pt / Ti layer of interdigitated electrodes (8), heating and temperature measuring electrodes (9) and ten parts of the tin dioxide gas sensitive layer (10).

[0040]The silicon substrate is mainly used as a supporting structure, and the device is fixed on the silicon substrate through the support arm (11). The anisotropic etching of silicon by KOH is used to etch away the silicon below the device to form a cavity, so as to increase the distance between the device and the surrounding area. Thermal insulation, interdigital electrodes and heating temperature measurement electrodes are connected with powe...

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Abstract

The invention discloses a gas sensor, relating to the field of micro-electro-mechanical system technique. The gas sensor comprises a single crystal silicon substrate, a silicon dioxide / silicon nitride layer which has supporting effect, a heating temperature-measuring electrode, an interdigital electrode, an electric insulation layer which is arranged between the heating temperature-measuring electrode and the interdigital electrode; the interdigital electrode leads out a wire pressing welding point and the heating temperature-measuring electrode leads out the wire pressing welding point and agas sensing layer; the electric insulation layer is deposited on the heating temperature-measuring electrode after being formed on the heating temperature-measuring electrode; the interdigital electrode is formed on the electric insulation layer; the gas sensing layer is deposited on the interdigital electrode. The gas sensor improves the thermal insulation of the heated working area part and circumference of the device, reduces the power dissipation of the device, simplifies the structure of the heating and temperature-measuring part of the device, and is beneficial for the large-scale production of the device and the integration of a signal collecting processing circuit.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (MEMS), in particular to a gas sensor. Background technique [0002] Gas sensor technology has a broad application prospect, and can be used in the detection of various flammable, explosive or harmful gases in factories, workshops and mines, and the monitoring and detection of flammable gas leakage in households. [0003] Tin dioxide gas sensor is widely used due to its simple structure, convenient manufacture and long life. However, the traditional structure of the tin dioxide gas sensor has inevitable weaknesses such as large volume, high power consumption, slow response and poor consistency. [0004] In recent years, with the development of silicon processing technology, especially micromachining technology has brought about fundamental changes in manufacturing and processing technology. Microstructure gas sensors prepared by microelectronics, micromachining and thin f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/00
Inventor 黄钦文景玉鹏陈大鹏欧毅叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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