Polysilicon directional long crystal thermal field

Abstract

The invention discloses a thermal field structure for directional crystal growth of polysilicon, which belongs to the technical field of the thermal field structures for the directional growth of solar polysilicon crystals, and consists essentially of a heat preserving and insulating cage body (1), a heater (6) and a heat exchange platform (5) that are arranged inside the heat preserving and insulating cage body (1), a heat preserving and insulating substrate (2) that is arranged in the bottom of the heat preserving and insulating cage body (1), can move upwards and downwards in the vertical direction and has a supporting guide rod (4), and a heat preserving and insulating clapboard (7) that is arranged between the lateral surface of the heat preserving and insulating cage body (1) and the heat exchange platform (5), etc. The heat preserving and insulating cage body (1) and the heat preserving and insulating substrate (2) form a chamber (3), the heater (6) and the heat preserving and insulating substrate (2) are respectively controlled by an external controller (8). Through the elevating structure of the heat preserving and insulating substrate that is arranged in the bottom of the heat preserving and insulating cage body, the technical means that are required for the directional crystal growth of the polysilicon are obtained, the dynamic adjustment in the control can be easily realized, and consequently the crystal growth speed can be realized maximally.

Description

technical field [0001] The invention relates to a polycrystalline silicon directional growth thermal field structure, which belongs to the technical field of directional growth thermal field structure of solar polycrystalline silicon crystals. Background technique [0002] Silicon (Si) is a semiconductor element. Solar silicon cells use this characteristic to form photovoltaic effects on the surface of silicon to generate electricity. In order to prepare solar cells, it is necessary to remelt the polysilicon raw material and then directional solidify it, and then slice it into cell components. In order to realize the directional solidification process of polysilicon, a thermal field capable of stabilizing crystal growth is required. The main components of the polysilicon growth thermal field are thermal insulation cages, heaters and heat exchange tables placed inside them. According to If needed, there can also be water cooling blocks. The thermal insulation cage is a squa...

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Problems solved by technology

Although the above two methods can achieve the purpose of crystal directional growth, they both have problems such as complex structure, high energy consumption, large thermal shock, slow crystal growth, and poor crystal growth quality.

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