Isolation structure of shallow plough groove and manufacturing method thereof

Abstract

The invention discloses a shallow trench isolating structure and a manufacture method thereof. After the trench is etched, a silicon nitride layer is removed; the silicon nitride layer with a very uniform thickness is formed on an underlay and the surface of the trench by utilizing a furnace thermal nitridation technique to be a rubbing stopping layer. As the thickness of the silicon nitride layer is very uniform, the consistency of the rubbing terminals of the rubbing technique of a chemical machine is greatly improved and the thickness of an oxide filled in the trench after rubbing can be more preciously controlled.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a shallow trench isolation (STI) structure and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor technology, the feature size of semiconductor devices has been significantly reduced, and correspondingly higher requirements have been put forward for the chip manufacturing process. One of the challenging issues is to fill the insulating dielectric uniformly and non-porously between the various film layers or in the trenches to provide sufficient and effective isolation protection. After the manufacturing process enters the deep submicron technology node, shallow trench isolation (shallow trench isolation, STI) structure has been mostly adopted for the isolation between the active regions of components below 0.13 μm, such as MOS devices. [0003] The Chinese patent application with the application number 20...

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Problems solved by technology

When it is used as a CMP grinding stop layer later, because the thickness of the pad silicon nitride layer 12 is not uniform, the position where the grinding process stops is uncertain, making the thickness of the silicon oxide layer 15 uncontrollable

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