Production method for nano focusing X ray lens combination
A combined lens and nano-focusing technology, applied in the field of X-ray microstructure optical devices, can solve the problems of poor light-collecting ability, low X-ray radiation transmittance, and high roughness of the combined lens, so as to improve the radiation transmittance, improve the The effect of improving the light-gathering aperture and light-gathering ability
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[0023] Example 1:
[0024] Referring to Figure 1, the steps of a manufacturing method of a silicon one-dimensional nano-focused X-ray combined lens are as follows:
[0025] (A) Using electron beam etching technology to make a photolithography mask of metal chromium material on a glass substrate, the photolithography mask pattern is composed of a plurality of combined lens refraction units arranged coaxially in sequence, and the refraction unit consists of The through-hole air gap is formed with the lens body material, the cross-sectional shape of the air gap is an ellipse, the maximum diameter of the air gap corresponding to the minor axis of the ellipse is smaller than the minor axis of the ellipse, and the elliptical air of the lens unit The major axes of the gaps are on the same straight line, and the size of the ellipse corresponding to the air gaps gradually decreases, and they are arranged in order from large to small;
[0026] (B) Perform conventional cleaning treatment on ...
Example Embodiment
[0033] Example 2:
[0034] In the technical solution of this embodiment, the thickness of the ultraviolet negative photoresist in step (C) is 1 micron, the thickness of the aluminum metal film in step (E) is 150 nanometers, and the total depth in step (G) The etching time for silicon is 30 minutes, the etching stage lasts for 6 seconds, and the gas SF 6 The injection rate is 130sccm, the working pressure is 2.4 Pa, the working power is 600W, the duration of the deposition stage is 5 seconds, and the gas C 4 F 8 The injection rate is 120 sccm, the working pressure is 1.9 Pa, and the working power is 600 watts. The rest is the same as in Example 1.
Example Embodiment
[0035] Example 3:
[0036] In the technical solution of this embodiment, the thickness of the ultraviolet negative photoresist in step (C) is 3 microns, the thickness of the aluminum metal film in step (E) is 200 nanometers, and the total depth in step (G) The etching time for silicon is 40 minutes, the etching stage lasts for 6.5 seconds, and the gas SF 6 The injection rate is 135sccm, the working pressure is 2.5 Pa, the working power is 610 watts, the duration of the deposition stage is 5.5 seconds, and the gas C 4 F 8 The injection rate is 125 sccm, the working pressure is 2.0 Pa, and the working power is 610 watts. The rest is the same as in Example 1.
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