Non-reflection high light extracting rate unit WLED power expanding type high power WLED light source

Abstract

The invention relates to a no-reflection high-efficient-luminescence unitary-WLED power-capacity-expansion high-power light source. A plurality of blue-light BLED chips are welded on a radiating base plate. The surfaces of the BLED chips are coated with silica gel phosphor powder, which forms white-light WLED illuminants. The high-light-transmittance and high-intensity industrial plastic PC is made into a thin isopachous hemisphere-shaped casing. The PC casing is filled with high-transparency silicon gel which has the same light transmittance as the PC, which forms a silica gel hemispherical lens. The silica gel lens is packaged above the phosphor powder along the centre to form the no-reflection and high-efficient-luminescence unitary WLED light source. A plurality of unitary WLED light sources are assembled to a high-power WLED light source by capacity expansion. The light source can be make into a street lamp, an emergency lighting lamp, a safety lighting lamp for mine roadway, a mine cap lamp, a safety lighting lamp for subway and airport, an indoor lighting lamp and other WLED lighting lamps. The invention has the advantages of scientifically reasonable structure, low production cost, good radiating property, low power consumption, high efficient luminescence, long service life and other advantages.

Description

technical field [0001] The content of the present invention belongs to the technical field of semiconductor lighting applications, and relates to a high-efficiency and energy-saving high-power WLED light source. Background technique [0002] So far, lighting equipment consumes the most electricity among all kinds of electrical equipment. At present, my country's lighting electricity consumption accounts for about 20% of the country's total power generation. The use of semiconductor lighting (LED) that can save electricity is undoubtedly the key to building an energy-saving society. Key factor. In recent years, with the launch of the National Green Lighting Project, the National Development and Reform Commission and other departments have jointly organized and implemented activities aimed at saving electric energy, protecting the environment, and improving lighting quality. Semiconductor lighting has become one of the "National Green Lighting Projects". Specify the main produ...

AI Technical Summary

Problems solved by technology

Considering that the incident angle of the light beam injected into the silica gel is relatively large, when the incident angle of the incident light is above 120°, the influence of the light intensity of the external radiation is already weak, and its light intensity contribution rate is calculated as 30%. The light beam will reduce the light output efficiency to: E=82° / [120°+(60°×30%)]=60%, that is, it will lose about 40% of the luminous flux; Reflected energy generates heat, which increases the temperature of the LED chip. When the LED chip works at a higher temperature, the luminous efficiency will be greatly reduced, causing the LED chip to produce luminous attenuation.

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