Organic electroluminescent device
An electroluminescent device, organic technology, applied in the direction of electroluminescent light source, electric light source, electrical components, etc., can solve the problems of easy pollution of evaporation chamber, poor high temperature stability, unfavorable storage and use of OLED devices, etc., and achieve improvement Effects of improving luminous efficiency and thermal stability and reducing chance
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Embodiment 1
[0033] Embodiment 1: (part number OLED-1)
[0034] Glass / ITO / m-MTDATA (120nm): BiF 3 [50%] / NPB(30nm) / Alq 3 (30nm): C545T[1%] / Alq 3 (20nm) / LiF(0.5nm) / Al(200nm) (1)
[0035] The specific preparation method of the organic electroluminescent device with the above structural formula (1) is as follows:
[0036] ① Clean the glass substrate by using boiling detergent ultrasonic and deionized water ultrasonic method, and place it under the infrared lamp to dry, and evaporate a layer of anode material on the glass with a film thickness of 80-280nm;
[0037] ②Place the above-mentioned glass substrate with anode in a vacuum chamber, and evacuate to 1×10 -5 pa Continue to evaporate the hole injection layer on the above-mentioned anode layer film, and use the double-source co-evaporation method to evaporate m-MTDATA and BiF 3 , the evaporation rate of both is 0.1nm / s, the total evaporation film thickness is 120nm, BiF 3 The doping concentration in m-MTDATA is 50wt%;
[0038] ③On the ...
Embodiment 2
[0042] Embodiment 2: (part number OLED-2)
[0043] Glass / ITO / m-MTDATA (120nm): Bi 2 o 3 [50%] / NPB(30nm) / Alq 3 (30nm): C545T[1%] / Alq 3 (20nm) / LiF(0.5nm) / Al(200nm) (2)
[0044] The preparation method is the same as in Example 1, except that the doping material is replaced by Bi when preparing the hole injection layer in step 2. 2 o 3 .
Embodiment 3
[0045] Embodiment 3: (part number OLED-3)
[0046] Glass / ITO / m-MTDATA (120nm): Sm 2 (CO 3 ) 3 [50%] / NPB(30nm) / Alq 3 (30nm): C545T[1%] / Alq 3 (20nm) / LiF(0.5nm) / Al(200nm) (3)
[0047] The preparation method is the same as in Example 1, except that the doping material is changed to Sm when preparing the hole injection layer in step 2. 2 (CO 3 ) 3 .
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