Method for preparing briented growth dielectric-constant adjustable strontium lead titanate film

Abstract

The present invention discloses a growth orientation of the dielectric constant adjustable strontium titan-ate thin films lead the preparation method, in the first coated onto a glass substrate at the end of the ITO electrodes drawn orientation induced by PT terbium-doped layer; again in terbium-doped Miscellaneous PT orientation induced layer deposition PST film; terbium-doped layer is induced by PT orientation (100) preferred orientation, the film also has PST (100) preferred orientation. The present invention through the random orientation of the substrate orientation PT induced by layer, induced by a high degree of preferred orientation of the PST film, avoid conventional film orientation of the single crystal substrates for high dependence at the same time this invention can be obtained relatively PST Films high scalability, high-performance approach for preparing a new film PST; PT induced orientation of the film can PST induced orientation, and promote the crystallization PST; whole process is simple to prepare low temperature, short cycle , the energy and cost savings with good market prospects.

Description

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AI Technical Summary

Benefits of technology

This patented technique allows for better control over properties such as thickness or alignment during manufacturing processes compared to existing techniques like spin coating. It involves creation of special layers that help improve performance without requiring more expensive materials than traditional ways. Additionally, this new way makes production faster and cheaper due to less time needed per unit area. Overall, these technical improvements make possible improved quality products made from rare earth element (RE) compounds used in electronic devices.

Problems solved by technology

This patented technical problem addressed in this patents relates to finding ways to reduce manufacturing costs while maintaining superior magnetic property values in various applications involving electronic components like microdevices. Previous attempts were either expensive or did not result satisfactory because these techniques resulted in inferior alignment or reduced capacitor leakage current when applied to thin films. To address this issue, there was developed a novel technique called pulsumetronics (PT), where nanoplasmon structures made from specific elements act as inductors and modulators within the device itself. These advancements make possible the creation of highly preferential orientation/epipersion type PST films without requiring specialized substrates.

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