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A diode and semiconductor technology, applied in the field of semiconductor devices, can solve the problems of device 91 damage, breakdown energy reduction, small surge withstand voltage, etc.
Active Publication Date: 2009-07-29
DENSO CORP
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In this case, when a high voltage surge is applied to the device 91, and an avalanche current flows into the P conductivity type region 2w, the parasitic NPN transistor easily functions so that the device 91 is damaged by the high voltage surge
Therefore, although the recovery performance of the diode unit 91d is improved, the breakdown energy becomes small so that the device 91 has a small surge withstand voltage
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[0037] figure 1 A semiconductor device 100 according to a preferred embodiment is shown. The device 100 includes an IGBT cell 100i and a diode cell 100d formed in the same substrate 1 . Device 100 includes a N - Conductive type semiconductor substrate 1 . The P conductive type layer 2a is formed on the main surface of the substrate 1, and the impurity concentration of the P conductive type region 2a gradually decreases from the surface portion to the inner portion. N on the main surface side with high impurity concentration + Conductivity type region 3a (ie, main N region) and P on the main surface side with high impurity concentration + The conductivity type region 4a (ie, the main P region) is formed on the surface portion of the P conductivity type region 2a. The main P region 4a is formed by the diffusion method so that the main P region 4a does not reach the PN junction between the P conductive type region 2a and the main N region 3a. The main P region 4a is provide...
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Abstract
A semiconductor device comprising: a substrate (1, 1a, 2a, 2b, 3a, 4a, 5, 6, 8, 10, 11, T1, T2) having a first side and a second side; an IGBT (100i, 104i , 105i); and diodes (100d, 104d, 105d). The substrate (1, 1a, 2a, 2b, 3a, 4a, 5, 6, 8, 10, 11, T1, T2) comprises: a first layer (1); a second layer ( 2a); the N region (3a) on the first side on the second layer (2a); the N region and the P region (5, 6) on the second side, located on the second side of the first layer (1); the first The first electrode (8) in the trench (T1) serves as a gate; the second electrode (10) is located on the N region (3a) on the first side and in the second trench (T2) and serves as an emitter and an anode; and a third electrode (11), located on the N and P regions (5, 6) on the second side, serving as a collector and a cathode. The first trench (T1) passes through the N region (3a) on the first side and the second layer (2a), and reaches the first layer (1). The second trench (T2) passes through the N region (3a) on the first side and reaches the second layer (2a).
Description
technical field [0001] The present invention relates to a semiconductor device having an IGBT and a diode. Background technique [0002] An inverter circuit for driving a load such as a motor is a converter for switching between direct current and alternating current. Thus, the converter converts the DC voltage to AC voltage so that the inverter circuit supplies power to the load. An inverter circuit for driving an induction type motor includes an IGBT (ie, an insulated gate bipolar transistor) and an FWD (ie, a freewheeling diode). IGBT provides switching devices. When the IGBT is turned off, the FWD bypasses the current flowing through the motor, so that the FWD controls the current flowing through the motor unchanged to counteract the switching operation of the IGBT. Specifically, the IGBT is electrically coupled between the DC power supply and the motor so that a predetermined voltage is applied to the motor. When the IGBT is turned off, the current flowing through t...
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