Backward integrated micro-lens infrared focal plane detector and micro-lens producing method

A technology of infrared focal plane and microlens, which is applied in photometry, lens, and semiconductor/solid-state device manufacturing using electric radiation detectors, can solve problems such as spatial crosstalk, reduce spatial crosstalk, improve efficiency, Ease of use

Active Publication Date: 2008-12-17
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] Aiming at the problem of severe spatial crosstalk in the above-mentioned new generation of high-density pixel infrared focal plane detectors, the purpose of the present invention is to propose a method that not only helps to improve the response rate, but also can effectively suppress the spatial crosstalk between adjacent pixels. Infrared focal plane detector facing back to integrated microlens array and preparation method of backing integrated microlens array

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  • Backward integrated micro-lens infrared focal plane detector and micro-lens producing method
  • Backward integrated micro-lens infrared focal plane detector and micro-lens producing method
  • Backward integrated micro-lens infrared focal plane detector and micro-lens producing method

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Embodiment Construction

[0022] Hereinafter, taking the mercury cadmium telluride infrared focal plane detector facing the integrated microlens array as an example, the specific embodiments of the present invention will be further described in detail with reference to the accompanying drawings:

[0023] see figure 1 The infrared focal plane detector facing the integrated microlens array is composed of mercury cadmium telluride infrared photosensitive element array chip 1, silicon readout circuit 2, hybrid interconnection indium column 3 and micro lens array 4. The mercury cadmium telluride infrared light sensitive array chip 1 is composed of a gallium arsenide substrate 101, and a photosensitive element array 102 that responds to infrared target radiation is placed on the gallium arsenide substrate 101. Each photosensitive element is composed of a p-type layer of mercury cadmium telluride and boron ion implanted into an n-type region. The microlens array 4 is formed on the back of the gallium arsenide su...

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Abstract

This invention relates to a trailing integrated micro-lens infrared focal plane detector and a preparation method for micro-lenses, in which, said detector includes: infrared photosensitive meta-array chips, a read-out circuit, a blending mutual-connected indium post and a micro-lens array, which is processed by micro-mechanism at the back of the substrate of the array chip applying an etching method to the positive pattern of a memory focal plane detection chip and a plasma combined etching technology, and the optical shafts of the trailing integrated micro-lens are coincident with the photosensitive face central normal of the corresponding photosensitive pixels.

Description

Technical field [0001] The invention relates to an infrared focal plane detector and a lens, in particular to an infrared focal plane detector facing away from an integrated micro lens array and a preparation method for the backward integrated micro lens array. Background technique [0002] The infrared focal plane detector is an advanced imaging sensor with both infrared information acquisition and information processing functions. It has important and extensive applications in military and civilian fields such as space-to-ground observation, photoelectric countermeasures, robot vision, search and tracking, medical and industrial thermal imaging, and missile precision guidance. Because of its irreplaceable status and role, the major industrial powers in the world have listed the infrared focal plane detector preparation technology as a key high-tech project for development. [0003] Driven by advanced infrared application systems, infrared detectors have entered a development st...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/00H01L25/18H01L27/14H01L21/00G01J1/42G02B3/00
Inventor 叶振华周文洪胡晓宁王晨飞丁瑞军何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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