Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Tertiary CAM cell

A memory unit, content addressing technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as unsuitable ternary CAM units

Inactive Publication Date: 2008-12-03
MICRON TECH INC
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, CAM cell 400 is not suitable for use with a ternary CAM cell because a ternary CAM cell must be able to store at least three states

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tertiary CAM cell
  • Tertiary CAM cell
  • Tertiary CAM cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The CAM cell architecture of the present invention, shown in CAM cell 600 in FIG. 6, utilizes tertiary storage elements with special properties to support readout without charge recovery operations. But before discussing the structure and work of the CAM cell architecture of the present invention in detail, first analyze Figure 5 The work of the tertiary storage circuit 500 of the 3-level storage circuit 500 will be helpful, because there are many similarities between the circuit 500 and the cell 600.

[0025] Tertiary storage circuit 500 ( Figure 5 ) includes three "NAND" gates 501, 502, 503, which respectively connect the three input terminals D0, D1, D2 to the three output terminals Q0, Q1, Q2. The output of each NAND gate 501, 502, 503 is also connected as an input to other NAND gates. For example, the output Q 0 of the NAND gate 501 is provided as an input to the NAND gates 502 , 503 . Using feedback in this manner limits the number of stable input / output stat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A tertiary CAM cell with three bits of storage is disclosed. The three bits of storage are arranged to support three stable states which can be read from the CAM cell without requiring a charge restoration operation. The three stables states are those states where one of the three bits is at a first logical state while the remaining two bits are at a second logical state. The three stables states may be used to encode the three logical states used in a ternary CAM.

Description

[0001] This application claims the benefit of US Provisional Application No. 60 / 324462 (filed September 25, 2001), the contents of which are hereby incorporated by reference in their entirety. technical field [0002] The present invention relates generally to data semiconductor memory and, more particularly, to three levels of content addressable memory (CAM) cells. Background technique [0003] Many applications require high speed searching for information. In many network devices, such as switches or routers, data packets are transmitted based on the content of embedded address information. Therefore, in order to achieve high data transfer rates, network systems must be able to perform very high-speed searches and comparisons. One type of circuit useful for this function is content addressable memory, or CAM. It should be noted that while the discussion below is in the context of networked systems, there are many other applications that require high speed searching and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C15/04
CPCG11C15/043G11C15/00
Inventor Z·雷格夫A·雷格夫
Owner MICRON TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products