Dynamic random access storage unit and its manufacturing method

Abstract

This invention discloses dynamic random access memory (DRAM) and making method thereof. The process for making groove capacitor of DRAM contains forming groove on substrate, then forming first capacitance dielectric layer, forming in conductive layer, forming second dielectric layer, the peripheral substrate of first and second dielectric layer are used as lower electrode, then forming a convex electrode covering juncture of groove and substrate and extended covering conductive layer, finally connecting convex electrode with conductive layer as the electrode of capacitor.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor component, and in particular to a dynamic random access memory unit (DRAM cell) and a manufacturing method thereof. Background technique [0002] The capacitor is an important part of the storage unit for storing information. If the capacitor stores more charges, the influence of noise will be greatly reduced when reading data. There are many ways to increase the capacity of a capacitor to store charges, such as increasing the area of ​​the capacitor to increase the amount of charge stored in the capacitor. Finding a new storage capacitor structure and manufacturing method so as to maintain the required capacitance while reducing the area occupied by the storage capacitor will be one of the goals to be achieved under the current increasing integration of components. [0003] At present, a kind called "deep trench capacitor (deep trench capacitor)" is widely used in storage elements, an...

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Problems solved by technology

Moreover, because the trench depth of the deep-trench capacitors of the prior art is very deep, it is necessary to cooperate with a larger capacitor cross-sectional area to facilitate the filling of the polysilicon layer.

Therefore, this deep trench capacitor cannot be scaled down with the trend of component miniaturization

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