Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography

Abstract

Firstly, to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. Secondary, to provide a method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The present invention is firstly a developing solution for photolithography comprising tetrabutylammonium hydroxide (A), and at least one selected from the group consisting of a water-soluble organic solvent (B1), a surfactant (B2), and a clathrate compound (B3). The present invention is secondary characterized by maintaining the temperature of liquid at 27° C. or higher during dilution.

Description

[0001]This application is based on and claims the benefit of priority from Japanese Patent Application Nos. 2009-296434, 2009-296435, 2010-031397 and 2010-240037, respectively filed on 25 Dec. 2009, 25 Dec. 2009, 16 Feb. 2010, and 26 Oct. 2010, the contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a developing solution for photolithography, a method for forming a resist pattern, and a method and an apparatus for producing a developing solution for photolithography.[0004]2. Related Art[0005]Recently, patterns are rapidly becoming finer due to advancement in photolithography technology to produce semiconductor elements or liquid crystal display elements. The fine patterns are achieved by miniaturizing resist patterns formed on surfaces of substrates etc. The resist patterns are prepared by forming a resist film of a resist composition containing a photosensitive compound on a surface ...

AI Technical Summary

Benefits of technology

[0012]The present invention has been made in view of the problems described above; and it is an object of the present invention to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. It is another object of the present invention to provide a developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed in a concentrated condition. It is still another object of the present invention to provide a method for producing a developing solution for photolithography, a developing solution for photolithography, a method for forming a resist pattern, and a production apparatus used for the production method in which deposition of tetrabutylammonium hydroxide (TBAH) can be suppressed when a developing solution of a desired TBAH concentration is produced by diluting a concentrated developing solution containing TBAH with pure water.

[0013]The present inventors have thoroughly investigated to solve the problems described above, and as a result have found that the deposition of TBAH in the developing solution can be suppressed by adding at least one component selected from the group consisting of a water-soluble organic solvent, a surfactant, and a clathrate compound to the developing solution containing TBAH.

[0023]In accordance with the present invention, firstly, a developing solution for photolithography is provided in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. In accordance with the present invention, secondly, a developing solution for photolithography is provided in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed in a concentrated condition. In accordance with the present invention, thirdly, a method for producing a developing solution for photolithography, a developing solution for photolithography, a method for forming a resist pattern, and a production apparatus used for the production method are provided in which deposition of tetrabutylammonium hydroxide (TBAH) can be suppressed when a developing solution of a desired TBAH concentration is produced by diluting a concentrated developing solution containing TBAH with pure water.

Problems solved by technology

The TBAH deposited in the developing solution is not easily solved again unless warmed or the like.

It is therefore impossible to use directly the developing solution containing the deposited TBAH in a development step and a labor hour of filter treatment or the like is necessary.

If the deposited TBAH is removed by filtration, it is also troublesome such that concentration control of the developing solution is complicated since the concentration of TBAH in the developing solution changes.

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