Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Disabling portions of memory with non-deterministic errors

a technology of non-deterministic errors and disabling portions of memory, applied in error detection/correction, instruments, computing, etc., can solve problems such as hard errors that consistently fail, errors from the memory point of view, and latent defects referring to defects that were not present,

Inactive Publication Date: 2008-01-10
INTEL CORP
View PDF4 Cites 41 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such defect may occur and be detected during manufacturing (or “fabricating”) the memory, or such defect may be a latent defect that is not observed until after the memory chip has been supplied by the manufacturer.
Latent defects may be caused, for example, by aging, stresses, and / or actual use of the memory, which results in errors from the point of view of the memory.
Thus, latent defects refer to defects that were not present (or did not manifest themselves) during the testing and production of the memory.
Some latent defects manifest themselves as hard errors which consistently fail when tested for.
Other latent defects manifest themselves as erratic errors which fail inconsistently.
Latent defects in memory if not detected, corrected, or avoided, will cause a running program accessing that portion of memory to crash.
Especially in systems expected to have high uptimes (high availability systems), this is not acceptable.
In addition, it is not acceptable to severely limit the performance of such systems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Disabling portions of memory with non-deterministic errors
  • Disabling portions of memory with non-deterministic errors
  • Disabling portions of memory with non-deterministic errors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010]In general, systems and methods are disclosed herein for identifying and avoiding attempts to access a defective portion of memory. That is, techniques are provided for detecting a defect in a portion of memory and dynamically avoiding future attempts to access the defective portion of memory. More specifically, the following techniques detect and avoid both hard and erratic errors. The embodiments described herein are described in the context of a cache memory in a microprocessor, but are not so limited. The same techniques and teachings of the present invention may easily be applied to other types of circuits or semiconductor devices containing memory that may benefit from reliable access to memory. In addition, the methods of the present invention may be implemented in software or hardware as one of ordinary skill in the art will appreciate.

[0011]In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Systems and methods are disclosed herein for identifying and avoiding attempts to access a defective portion of memory. Various techniques are provided for detecting a defect in a portion of memory and dynamically avoiding future attempts to access the defective portion of memory. More specifically, the techniques detect and avoid both hard and erratic errors.

Description

BACKGROUND OF THE INVENTION[0001]Data storage, referred to generically herein as “memory,” is commonly implemented in computer systems. Computer systems may employ a multi-level hierarchy of memory, with relatively fast, expensive but limited-capacity memory at the lowest level of the hierarchy and proceeding to relatively slower, lower cost but higher-capacity memory at the highest level of the hierarchy. The hierarchy may include a fast memory called a cache, either physically integrated within a processor or mounted physically close to the processor for speed. In addition, the computer system may use multiple levels of caches.[0002]From time-to-time a defect may occur within a portion of memory. Such defect may occur and be detected during manufacturing (or “fabricating”) the memory, or such defect may be a latent defect that is not observed until after the memory chip has been supplied by the manufacturer. Latent defects may be caused, for example, by aging, stresses, and / or act...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C29/00
CPCG06F11/1024G11C29/52G11C2029/0409G11C29/883G11C29/88
Inventor CHANG, TSUNG-YUNG (JONATHAN)SRIVASTAVA, DURGESHSHOEMAKER, JONATHANBENOIT, JOHN
Owner INTEL CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products