Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self-assembled structures

a self-assembling and structure technology, applied in the direction of thin material processing, material nanotechnology, coatings, etc., can solve the problems of general limitations in self-assembly approaches

Inactive Publication Date: 2005-12-08
NANOGRAM
View PDF20 Cites 75 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, self-assembly approaches generally have been limited with respect to the types of materials that can be deposited by a particular approach.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-assembled structures
  • Self-assembled structures
  • Self-assembled structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Extremely small and well defined structures, for example of inorganic particles, can be formed in association with a surface using self-assembly approaches. Nanoparticles with very uniform sizes are preferred components for forming self-assembled structures, although other functional compositions can be used. The nanoparticles are organized into a well defined structures using fabrication techniques that take advantage of molecular recognition characteristics of self-assembly approaches. Molecular recognition can involve various interactions, such as commingling, key-lock relationships and guest-host interactions.

[0025] The deposition techniques are combined with localization techniques that constrain the resulting structures within isolated islands along the substrate surface. The islands can be ordered or disordered arrays. The organized structures or islands are suitable for the production of microelectronics and the like, which incorporate well defined miniature componen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
average primary particle diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

A material includes a layer with a plurality of self-assembled structures comprising compositions. The structures are localized in separate islands covering a portion of the layer in an integrated assembly. In some embodiments, the compositions include nanoparticles. In particular, some embodiments pertain to a material with a self-assembled formation of inorganic particles with an average diameter less than about 100 nm. The structures can be used as devices within an integrated article. The method for producing the articles comprises a localization process defining boundaries of the devices and a self-assembly process within the identified boundaries.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional of copending U.S. patent application Ser. No. 09 / 558,266 filed Apr. 25, 2000 to Kambe et al., entitled “Self-Assembled Structures,” incorporated herein by reference.BACKGROUND OF THE INVENTION [0002] The invention relates to small scale structures forming devices with application, for example, to microelectronics. In particular, the invention relates to self-assembled structures on and / or within a surface of a material structure. [0003] Advances in a variety of fields have created a demand for many types of new materials. In particular, a variety of chemical powders can be used in many different processing contexts. Specifically, chemical powders can be used in the production of electronic devices, such as flat panel displays, electronic circuits and photonic crystals. [0004] Similarly, technological advances have increased the demand for improved material processing with strict tolerances on processing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): B82B1/00B32B3/18
CPCB32B3/18B82Y10/00B82Y30/00Y10T428/24802Y10T428/25Y10T428/24942B32B3/00
Inventor KAMBE, NOBUYUKIDARDI, PETER S.
Owner NANOGRAM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com