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Method for judging maintenance of times of semiconductor production apparatuses

A technology for manufacturing devices and semiconductors, applied in the field of CVD devices and its purification, can solve the problems of difficult monitoring, clogging of sampling pipes, and difficulty in frequently monitoring the moisture content of corrosive gases, so as to reduce waste and time waste, and achieve high-efficiency purification treatment. Effect

Inactive Publication Date: 2006-11-01
SUMCO CORP +1
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  • Description
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  • Application Information

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Problems solved by technology

That is to say, after the corrosive gas is heated in the reaction chamber, part of it is introduced into the above-mentioned moisture meter through the sampling pipe, but the side reaction growth is deposited on the inner wall of the sampling pipe leading to the moisture meter, and the sampling pipe may be blocked. sex
Therefore, it is difficult to constantly monitor the moisture in the corrosive gas in the process, that is, it is difficult to monitor in situ

Method used

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  • Method for judging maintenance of times of semiconductor production apparatuses
  • Method for judging maintenance of times of semiconductor production apparatuses
  • Method for judging maintenance of times of semiconductor production apparatuses

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Experimental program
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Effect test

Embodiment

[0051] First, the purification effect of the conventional purification treatment using only an inert gas and the purification treatment using a gas mixture of an inert gas and a gas with a high thermal conductivity was compared. After the moisture concentration in the gas discharged from the reactor 112 is fully purified in advance to 0.1 ppm or less, the door between the reactor 112 and the dry box 113 is opened while nitrogen gas is flowing during the actual film formation operation. 15 minutes of standard time.

[0052] Then, after the door is closed, only nitrogen gas is passed through the reactor 112 as a purge gas, and the discharge amount of water molecules in the exhaust gas is stabilized until the heating wire is heated to 120° C., and the heating of the heating wire is stopped after 40 minutes have elapsed. Heat to lower the temperature slowly. The moisture content in the exhaust gas during this baking and cleaning period was measured. figure 2 Indicates its resul...

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Abstract

In order to efficiently carry out the purification treatment after maintenance, at the same time, the completion of the purification treatment can be reliably known, the time required for the purification treatment can be shortened, and the CVD apparatus can be restored. Gas with high coefficient and inert gas are used as purge gas. In the purification process before the formation of the semiconductor film, the evacuation and the introduction of the inert gas are repeated many times. In addition, in order to judge the appropriate maintenance period of the semiconductor manufacturing apparatus which performs corrosive gas processing in the reaction chamber, the maintenance period of the corrosive gas is determined according to the change of the water concentration when the corrosive gas processing is repeated.

Description

[0001] This application is a branch of an invention patent application with an application date of August 31, 2000, a divisional submission date of October 17, 2003, an application number of 200310102823.7, and an invention title of "Purification method for a chemical vapor deposition device". The application No. 200310102823.7 is the application date of August 31, 2000, the application number is 00131310.X, and the title of the invention is "chemical vapor deposition device and its purification method and semiconductor manufacturing device". Divisional application. technical field [0002] Aspects of the present invention relate to a CVD (Chemical Vapor Deposition) apparatus and a cleaning method thereof, and particularly to a structure of a CVD apparatus and a cleaning method thereof which can shorten the time required for cleaning after maintenance. [0003] In addition, the present invention relates to a moisture monitoring device for monitoring moisture contained in a cor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/39C23C16/00H01L21/205
Inventor 长谷川博之山冈智则石原良夫增崎宏佐藤贵之铃木克昌德永裕树
Owner SUMCO CORP
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