Ion implanting apparatus and ion implanting method

Abstract

The invention discloses an ion implantation device and an ion implantation method. The ion implantation apparatus is provided with a control device, which controls its operating state to be in any mode selected from the following modes during the process of not performing ion implantation on the substrate, the mode being: (a) standby mode, wherein, The flow rate of the raw material gas supplied to the ion source and the power supplied from the plasma generating power supply are reduced to a value that can maintain the generation of plasma in the ion source; (b) a magnet off mode, wherein, except for the state in the standby mode, the self-energy Outputs of the separation magnet power supply, the scanning magnet power supply, and the beam parallelization magnet power supply are also stopped; and (c) a shutdown mode in which the supply of the raw material gas is terminated, and the output from the power supply is terminated.

Description

[0001] This application is a divisional application of the No. 02154068.3 invention patent application filed on December 10, 2002. technical field [0002] The present invention relates to an ion implantation apparatus and an ion implantation method that implant ions by irradiating a substrate (such as a semiconductor substrate in the following description of the specification) with an ion beam. More particularly, the present invention relates to an ion implantation apparatus and an ion implantation method capable of reducing energy required to operate the ion implantation apparatus. Background technique [0003] In the prior art ion implantation apparatus, when the substrate is not implanted with ions, for example, during the period from when ion implantation has been completed for a certain group of substrates to when ion implantation is started for the next group of substrates, the apparatus The operating state of is the following state (a) or (b). That is, the operating...

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Problems solved by technology

[0005] However, since the (a) operating state continuously produces an ion beam of the desired ion type, not only wasteful power or ion source feed gas is consumed, but also the ion source is depleted / degraded, speeding up the removal of harmful gases contained in exhaust gases and other devices. Reduced outgassing equipment life for substances

Therefore, COO reduction cannot be achieved

[0006] On the other hand, although (b) running state can achieve COO reduction, almost all devices are stopped

Therefore, the disadvantage of this method is that the start-up of the ion implantation equipment is very slow when the ion implantation is resumed

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