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Electron beam processing technology for mask repair

An electron beam and electron technology, applied in the field of charged particle beam processing, can solve problems such as adverse effects and limitations of mask performance

Inactive Publication Date: 2010-06-02
FEI CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The altered phase alters the spatial image, adversely affecting mask performance, especially phase-shifted masks
Also, there is a limit to how much implanted gallium can be removed by the process of injecting the gallium beam onto the surface

Method used

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  • Electron beam processing technology for mask repair
  • Electron beam processing technology for mask repair
  • Electron beam processing technology for mask repair

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Detailed Description of Preferred Embodiments

[0024] As mentioned above, impinging the gallium ion beam on the quartz surface reduces the surface transparency and thus adversely affects the performance of the quartz photolithography mask. While the reduction in transparency can be used purposefully to make a portion of the mask relatively opaque, the incidental reduction in transparency can also have undesired side effects when gallium ion beams are used to repair areas that are not intended to be opaque.

[0025] Applicants have discovered that the transparency of a repaired area can be restored by directing an electron beam into the repaired area in the presence of an etch enhancing gas. Applicants have found that the effectiveness of this process varies with the concentration of implanted gallium.

[0026] When the implanted gallium is at a relatively high concentration, applicants have found that the transparency of the repaired area can be restored without appre...

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Abstract

Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentration of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100% although the thickness of the substrate isreduced. The invention is suitable for use in the repair of photolitography masks.

Description

technical field [0001] This invention relates to charged particle beam processing techniques for repairing defects on lithographic masks. Background technique [0002] Photolithography is a technique used to produce small structures such as integrated circuits and micromotors. Photolithography involves exposing a radiation-sensitive substance known as a photoresist to a pattern of light or other radiation. Typically, the pattern is created by passing radiation through a mask consisting of a substrate with the pattern on its surface. The pattern blocks part of the radiation or causes the radiation to change its phase, creating exposed and unexposed areas on the radiation sensitive material. In a binary intensity mask, the pattern consists of light absorbing material on an oppositely transparent substrate. In a phase-shift mask, the pattern consists of a material that shifts the phase of light passing through it, creating an interference pattern on the photoresist that prod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F9/00G21K5/10C23F1/00C23F1/02C23F3/00C03C15/00B01J19/08G03FG03F1/00H01L21/027
CPCG03F1/74H01J2237/31744
Inventor D·K·斯图尔特J·D·小卡西J·贝蒂C·R·穆西尔S·伯格S·J·西布兰迪
Owner FEI CO
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