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Anti-radiation electric field microsensor

A micro-sensor, anti-radiation technology, applied in electrostatic field measurement and other directions, can solve the problems of poor reliability, low resolution, difficult packaging of movable structures, etc., to achieve the effect of improving reliability

Inactive Publication Date: 2005-11-09
SOUTHEAST UNIV
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Problems solved by technology

The main defects of this dynamic induction micro-electric field sensor are: (1) because the micro-resonant structure has higher requirements on the process line, and the packaging of the active structure is more difficult, the reliability of the micro-electric field sensor using this structure is poor
(2) The principle of dynamic induction electric field makes its resolution not high (the highest resolution currently reported is 630V / m)

Method used

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Embodiment Construction

[0011] A radiation-resistant electric field microsensor for collecting electric field signals, comprising a p-type substrate 1, a hole 6 is arranged at the bottom of the p-type substrate 1, and a hole 6 (about 0.1 μm) is arranged on the upper surface of the p-type substrate 1 n-type silicon 2, two heavily doped n-type contact regions 3 are implanted on the n-type silicon 2, an n-type channel 7 is arranged between the two n-type contact regions 3 and the two n-type contact regions 3 Connected by n-type channel 7, on the n-type contact region 3 and n-type channel 7 (about 50nm) SiO 2 Layer 4 is provided with a metal lead 5 on the heavily doped n-type contact region 3 .

[0012] After the two n-type heavily doped contact regions of the present invention are applied with a voltage, when there is an external electric field incident on the n-type channel of the electric field microsensor, the carriers (electrons) in the channel will increase accordingly, thereby making the channel ...

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Abstract

The invention discloses a micro anti-radiation electric field sensor which is used for collecting electric field signals. It includes a P-type bottom under which there are holes. On the bottom's surface, N-type silicon exists. In the meanwhile, there are two impure N-type contiguity regions on the N-type silicon. A metallic lead on these contiguity regions which are linked by a N-type channel. On the surfaces of the N-type contiguity regions and channel, there is a SiO2 layer. The advantages of the invention are using the drift principle of electric charges in the intermingling semi-conductor, inducting the electric field with a static state, thus raise the reliability of the invention; realize radiation protection and some other advantages because the P-type bottom has holes so that ions can not arrive at impure N-type contiguity regions, although they are sent into the bosom.

Description

technical field [0001] The invention relates to a miniature electric field sensor for collecting electric field signals, in particular to a radiation-resistant electric field microsensor. Background technique [0002] The sensing principle of existing electric field microsensors is mainly the principle of dynamic sensing, that is, using a resonant structure to alternately block the conductor of the induced electric field, thereby generating an induced current. The main defects of this dynamic sensing micro-electric field sensor are: (1) Since the micro-resonant structure has high requirements on the process line, and the packaging of the active structure is difficult, the reliability of the micro-electric field sensor using this structure is poor. (2) The principle of dynamic induction electric field makes its resolution not high (the highest resolution reported so far is 630V / m). Contents of the invention [0003] T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/12
Inventor 黄庆安王立峰秦明
Owner SOUTHEAST UNIV
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