Method for fabrication of a contact structure

Abstract

A method for producing a contact structure (116) on a structured surface (100a) comprises producing a first conductive layer (112) on the structured surface (100a), the first conductive layer (112) comprising tungsten. A conductive seed layer (114) is produced on the first conductive layer (112), the contact structure (116) being produced by electroplating on the seed layer (114). The first conductive layer (112) serves as an etch stop for selectively removing substrate material from the backside.

Description

technical field [0001] The invention relates to the manufacture of contact structures on a structured surface of a substrate. Background technique [0002] Due to the increase in quality and size requirements, the manufacturing of contact structures has created challenges that need to be considered in many fields; especially for semiconductor substrates, due to the strong requirements for their electrical properties, many have arisen. Question about electrical contacts. As semiconductor applications progress towards frequency ranges above 1 GHz, optimization of the contact between active components and RF ground points becomes an important requirement; so far, the main potential for its application has been in silicon components The inductance value of this bonding line is generally about 0.5nH, which depends on the length of the bonding line; its corresponding impedance at 1GHz The value is 3 Ohm, the presence of impedance values ​​of this magnitude in the emitter and / or ...

AI Technical Summary

Problems solved by technology

[0010] In short, the contact on the surface of the structure required by the current technology, especially the semiconductor technology, cannot be produced by means of the known technology.

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