Ripple analyzing method for non-linear circuit signal continuous frequency spectrum

A nonlinear circuit and wavelet analysis technology, applied in the fields of electrical digital data processing, instruments, calculations, etc., can solve problems such as high complexity and large dimension of equations

Inactive Publication Date: 2005-07-27
FUDAN UNIV
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a given high frequency ω M , in order to obtain sufficient accuracy, a large number of discrete sampling time points are required, that is, the value of M will be very large, resulting in a large dimension of the equation system (10) and a high complexity of solution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ripple analyzing method for non-linear circuit signal continuous frequency spectrum
  • Ripple analyzing method for non-linear circuit signal continuous frequency spectrum
  • Ripple analyzing method for non-linear circuit signal continuous frequency spectrum

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0106] Taking noise analysis as an example below, the present invention is further described through specific embodiments.

[0107] right Figure 1 The MOS transistor amplifier circuit shown in the figure, wherein the input excitation of the circuit is a white noise signal of 10Khz (the maximum amplitude is 1), is simulated by using the Wavelet based method of the present invention, and the specific steps are as follows.

[0108] Step 1: Construct the nonlinear system description of the amplifier circuit:

[0109] RC d V out dt = - V out - I DS · R + 5

[0110] V out | t=0 =-3.2266v

[0111] Here R=1000 ohms, C=0.1 microfarads, I DS The definition of is as follows, where λ=0.0953, k=9.2×10 -4 , V T = 0.8 volt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An analysing method of wavelet includes building up nonlinear system equation, mapping actual analog zone onto wavelet analog zone, carrying out series expansion for system variable and carrying out system discretization, obtaining wavelet coefficient by solving the equation and calculating out signal value of system variable on discrete time point, utilizing Fourier series expansion formula in frequency domain to obtain continuous requency spectrum.

Description

technical field [0001] The invention belongs to the technical field of circuit simulation, and in particular relates to a wavelet analysis method of a signal continuous frequency spectrum in a nonlinear circuit. technical background [0002] Integrated circuits have been developed to the point where electronic systems containing more than 1 billion devices can be integrated on a chip, that is, a system-on-a-chip (SOC). For millions of large-scale circuits, how to quickly and accurately simulate and verify the correctness of its design within a reasonable time has become a bottleneck in the design of system-on-chip (SOC). According to statistics, the time for SOC chip simulation verification has accounted for 70% of the entire design time. [0003] At present, more and more SOC chips are digital-analog mixed. With the continuous progress of mixed-signal circuits, the circuit structure of the analog circuit part is becoming more and more complex and showing a trend of diversi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F17/50
Inventor 曾璇童家榕刘榜
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products