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Micro refrigerator and producing method thereof

A cooler and miniature technology, which is applied in the direction of thermoelectric devices, electric solid devices, semiconductor devices, etc., can solve the problems of device separation and limit the working efficiency of devices, achieve good consistency, realize array cooling, and achieve consistent and uniform sexual effect

Inactive Publication Date: 2005-04-27
SOUTHEAST UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, this process requires strict control of the thickness of the thermoelectric unit. During the bonding process of each substrate, if the unit thickness is different, the device will be separated and an open circuit will be formed. Secondly, the precise positioning of the thermal unit and the metal electrode position is also required. to reduce contact resistance
On the other hand, since the materials used are V and VI compound thin films, the thermoelectric quality index ZT of the system cannot break through the limit of bulk materials, thus limiting the working efficiency of the device.

Method used

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  • Micro refrigerator and producing method thereof
  • Micro refrigerator and producing method thereof
  • Micro refrigerator and producing method thereof

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Embodiment Construction

[0042] The invention adopts the combination of the electroless metal plating film forming process and the oxide isolation process to form a multi-stage miniature refrigerator. The refrigerator has a multi-layer structure, and the lowermost layer is a high-temperature area 1, and two metal layers 2 are respectively arranged on the high-temperature area 1, a P-type semiconductor 3 is arranged on one of the metal layers 2, and a P-type semiconductor 3 is arranged on the other metal layer 2. An N-type semiconductor 6 is arranged on it, an integral upper metal layer 4 is arranged on the P-type semiconductor 3 and the N-type semiconductor 6 , and a low-temperature region 5 is arranged on the upper metal layer 4 .

[0043] The concrete structure of this refrigerator is divided into upper and lower two parts; Layer 8, the first heavily doped layer 9 of P-type semiconductor is arranged at intervals on the undoped layer 8 of P-type semiconductor, and the first heavily doped layer 9 of P...

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Abstract

The micro refrigerator is used in raising the temperature control of laser device and computer CPU, improving the work efficiency of chip and prolonging their service life. The refrigerator is one multilayer structure including the high temperature area, metal layer, P-type semiconductor, N-type semiconductor, upper metal layer and low temperature area successively from bottom to top. It is prepared with superlattice material Si and Ge and the preparing process includes combined chemical plating process and oxide isolating process to form several stages of micro refrigerator, forming plasma reinforced chemical vapor deposited SiO2 film as protecting layer and chemical copper plating to form metal film in the bonding surfaces between P-type and N-type semiconductors.

Description

technical field [0001] The invention is a technology for improving the temperature control of laser devices and computer CPUs, improving the heat dissipation inside the chip, thereby improving the working efficiency of the device chip and prolonging the service life. It belongs to the field of advanced manufacturing and automation technology. Background technique [0002] Currently, thermoelectric materials can form solid-state coolers and generators. Solid-state thermoelectric generators and refrigerators use the Peltier effect of electrons to take away excess heat, and they mainly face the problem of thermoelectric conversion efficiency. The performance index of thermoelectric cooling devices is generally described by the quality coefficient ZT, and its mathematical expression is: ZT=S 2 σT / k, where T is the absolute temperature, S is the Seebeck coefficient of the material, σ is the electrical conductivity, and k is the thermal conductivity. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/38H10N10/00H10N10/10
Inventor 陈云飞陈益芳杨决宽
Owner SOUTHEAST UNIV
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