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Apparatus and methods for nondestructive data storage and retrieval

A technology of data storage device and storage unit, which is applied in the direction of digital memory information, information storage, static memory, etc., and can solve the problems of unspecified access speed, application voltage level, frequency detection reliability and immunity, small signal range performance, Issues such as access time are not indicated

Inactive Publication Date: 2005-04-06
THIN FILM ELECTRONICS ASA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

but does not indicate the achievable access times for piezoelectric effect-based readout
Furthermore, the achievable small signal range performance with respect to access speed, applied voltage level, frequency, detection reliability and noise immunity is not indicated in the application

Method used

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  • Apparatus and methods for nondestructive data storage and retrieval
  • Apparatus and methods for nondestructive data storage and retrieval
  • Apparatus and methods for nondestructive data storage and retrieval

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0030] Example 1: Resonant excitation

[0031] Depending on the materials, dimensions and geometry chosen, the vibrations shown in Figure 5 can be excited resonantly. As can be easily determined from the corresponding selection of materials, the free vibrational frequency of the structure shown in Figure 5 with cell widths of micrometer size will be very high, ie in the region of several hundred kHz to several hundred MHz. According to the obtained Q value, it can be m , c m The readout operation is performed with low voltage excitation, thereby minimizing disturbance and crosstalk in the readout signal. Finally, note that the readout scheme in Figure 5 offers the opportunity for massive parallelization and a correspondingly high data output rate.

example 2

[0032] Example 2: Ring-down detection

[0033] If a sufficiently high mechanical Q value is obtained, then in the two-electrode b m , c m The vibrations shown will continue for a period of time after the electronic excitation has been turned off, allowing readout without disturbing the excitation voltage.

example 3

[0034] Example 3: Pulse Detection

[0035] Excitation of double electrodes without sinusoidal or other periodic voltages b m , c m , a single-step or delta pulse can be applied so that α n1 and α n2 Cell compression or expansion. Similar is the piezoelectric spark generator. This provides a very fast readout as the compression sound wave passes over the subunit α n1 and α n2 The transit time is in the sub-nanosecond range in typical memory structures.

[0036] Figure 6a and 6b in plan and along Figure 6a A cross-sectional view taken along line A-A in , represents a memory device that is in many respects very similar to that shown in Figures 1 and 2, except where the dual electrodes b are actuated differently during data readout m , c m outside. Correspondingly, there are certain physical differences in the overall structure and in the process of encoding (writing) and reading data. Now fill the double electrode b with a material m , c m volume or gap between...

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Abstract

In a data storage apparatus comprising means for storing and retrieving data in respective write and read operations, and first and second set of addressing electrodes are provided, the latter set having electrodes that preferably are oriented orthogonally to the electrodes of the first set, and the electrodes (b, c) of the second set are provided as parallel twin electrodes located in parallel recesses or trenches (3) in the electrodes of the first set. The trenches compris a soft ferroelectric or electret memory material with piezoelectric properties such that memory cells (1) with two subcells (alpha1, alpha2) are formed in the trench (3) respectively between the electrodes (a) of the first set and the parallel twin electrodes (b, c) on either side of the latter. In a write operation data are encoded in the memory cells (1) by means of an applied voltage potential over the subcells (alpha1, alpha2). In a non-destructive readout operation of data encoded and stored in the memory cells (1) in this manner, the piezoelectric properties of the memory material (2) is employed for eliciting response signals from the subcells (alpha1, alpha2) of a memory cell (1) when the former are subjected to mechanical stresses in the lateral direction, such that the logical value stored in the memory cell (1) can be determined.

Description

technical field [0001] The present invention relates to a data storage device having means for storing and retrieving data in each write and read operation, wherein the data is stored in a ferroelectric or electret (ferroelectric or electret) in a non-volatile manner similar to the polarization state. electret) memory cells, wherein the memory cells are provided in an addressable passive matrix array, wherein for write and read operations, the memory cells are independently electrically addressable, and the memory cells are Addressing occurs through the intersection of electrodes of a respective first and second electrode set, wherein each electrode set consists of parallel strip electrodes such that the electrodes of the first electrode set are positioned substantially perpendicular to the second electrode set the electrode; also relates to a method for performing non-destructive reading in the device according to claim 1; and a method for applying pressure for writing in the...

Claims

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Application Information

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IPC IPC(8): G11C5/02G11C11/22H01L21/8246H01L27/105
CPCG11C11/22H01L27/04
Inventor H·G·古德森P·E·诺尔达尔
Owner THIN FILM ELECTRONICS ASA
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