Array structure of transverse electric field effect type and its manufacturing method
A liquid crystal display, lateral electric field technology, applied in semiconductor/solid-state device manufacturing, static indicators, instruments, etc., can solve the problems of electric field confusion between electrodes, and achieve the effects of preventing poor contact, improving the pass rate, and improving the aperture ratio
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[0080] The IPS liquid crystal display of the first embodiment of the present invention is manufactured by the following steps (1) to (8) in the same manner as the above-mentioned prior art IPS liquid crystal display 101 . That is, refer to Figure 18 , (1) Prepare a transparent insulating substrate such as an insulating substrate. (2) Form the gate line 62, the hollow wing portion 70, and the capacitive electrode 66 having an electrode portion on a glass substrate. (3) The first insulating layer 64 is formed by the CVD method. (4) Form on the insulating layer 64: the signal line 74, connected to the TFT 82 with a part of the gate line 62 as the gate electrode, the drain electrode 80 of the TFT 82; the counter electrode 76, via the first insulating layer 64 facing the electrode portion of the capacitance electrode; and an intra-pixel wiring 79 for connecting the counter electrode 76 and the source electrode 78 of the TFT 82 . (5) The second insulating layer 72 is integrated ...
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