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Double-barrier tunnel junction senser having effect of resonance tunnel pass

A technology of resonant tunneling and double potential barriers, applied in the field of tunnel junction magnetic heads, can solve problems that have not been solved well

Active Publication Date: 2005-03-30
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, experimentally, how to design a double-barrier tunnel junction with resonant tunneling effect has not been well resolved.

Method used

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  • Double-barrier tunnel junction senser having effect of resonance tunnel pass
  • Double-barrier tunnel junction senser having effect of resonance tunnel pass
  • Double-barrier tunnel junction senser having effect of resonance tunnel pass

Examples

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no. 1 example

[0030] FIG. 4 shows the structure of the double-barrier tunnel junction with resonant tunneling effect according to the first embodiment of the present invention.

[0031] Figure 4, made of silicon dioxide (SiO 2) or similar material is formed on a silicon substrate 20, and a lower layer L1 is formed above the tunnel insulating layer 21, which consists of a ferromagnetic layer 22A, a ferromagnetic layer formed on the ferromagnetic layer 22A The upper antiferromagnetic layer 22B and a ferromagnetic layer 22C formed on the antiferromagnetic layer 22B, the magnetization direction of the lower layer L1 is fixed in position; a first layer formed on the ferromagnetic layer 22C Tunnel insulating layer I1, and an intermediate layer L2 is formed on the first tunnel insulating layer I1, which layer is made of non-magnetic metal or semiconductor; a second tunnel insulating layer I2 formed on the intermediate layer L2; a The upper layer L3 formed on the second tunnel insulating layer I2 ...

no. 2 example

[0036] In the above embodiment, the magnetization direction of the upper layer L3 can be changed with the external magnetic field, while the magnetization direction of the lower layer L1 is fixed. Therefore, a thicker antiferromagnetic layer is formed under the ferromagnetic layer 22C. Layer 22B, however, will increase the surface roughness of layer 22C, and then when the first tunnel insulating layer I1 is formed on 22C, this surface roughness will affect their interface characteristics, thereby affecting the performance of the sensor. In view of the above problems, this embodiment proposes a double-barrier tunnel junction sensor in which the magnetization direction of the upper layer L3 is fixed and the magnetization direction of the lower layer L1 is free.

[0037] FIG. 5 shows the structure of a double barrier tunnel junction sensor with resonant tunneling effect according to the second embodiment of the present invention.

[0038] As shown in Figure 5, silicon dioxide (Si...

no. 3 example

[0042] It is known from early theory that the TMR value of the tunnel junction is related to the spin polarizability of the materials on both sides of the barrier, and the theory and experiments have proved that the spin polarizability of half-metallic magnetic materials is almost 100%, and the spin polarizability made of this material Double barrier tunnel junctions have higher TMR values. In view of this, the present embodiment provides a double-barrier tunnel junction sensor with resonant tunneling effect based on half-metallic magnetic materials.

[0043] The structure of the double barrier tunnel junction sensor of this embodiment is similar to that of the second embodiment. As shown in Figure 5, made of silicon dioxide (SiO 2 ) or similar material is formed on a silicon substrate 30, and a lower layer L1 is formed above the tunnel insulating layer 31, which is composed of a ferromagnetic layer 32A and a layer formed on the ferromagnetic layer 32A. The above half-metal ...

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Abstract

The sensor includes following structure: a low layer consists of ferro-magnetic material or semi ferro-magnetic material; a first tunnel insulation layer on the said low layer; an intermediate layer made from ferro-magnetic material or semi metallical magnetic material or non magnetic metal material or semiconductor material on the said first tunnel insulation layer; a second tunnel insulation layer on the said intermediate layer; an upper layer made from ferro-magnetic material or semi ferro-magnetic material. In the structure, tunneling effect occurred in procedure of electrons passing through two tunnel insulation layers at higher TMR value. Magnetic sensors made from the tunnel junction have higher resolution.

Description

technical field [0001] The invention relates to a tunnel junction magnetic head, in particular to a double potential barrier tunnel junction sensor with resonant tunneling effect. Background technique [0002] Since Fert discovered the giant magnetoresistance effect (GMR) in magnetic multilayer films in 1988, great progress has been made in the research and application of physics and material science. High-sensitivity sensors and hard disk heads made with the GMR effect quickly occupy the market. After using the current GMR readout head, the recording density of the hard disk can reach 30Gbits / in 2 , an improvement of nearly 500 times. In 1995, after Miyazaki et al. discovered the large magnetoresistance effect (TMR) at room temperature, the use of magnetic tunnel junction materials to develop a newer generation of computer read-out heads and higher-density hard disk systems is one of the goals pursued by many large companies in the world. Among them, TDK Corporation In Ma...

Claims

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Application Information

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IPC IPC(8): G11B5/33G11B5/39
Inventor 曾中明韩秀峰张谢群瑞哈娜赵静姜丽仙詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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