Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Impurity filter possessing magnetic field and electric field

A filter, magnetic field technology, applied in the fields of filtration separation, chemical instruments and methods, separation methods, etc.

Inactive Publication Date: 2003-05-07
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A common problem is how to effectively absorb or filter impurities with small particles, especially impurities with a diameter of less than 0.1 microns

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Impurity filter possessing magnetic field and electric field
  • Impurity filter possessing magnetic field and electric field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] The impurity filter 1 with magnetic / electric field of the present invention is composed of a small-diameter curved tube wall 3 made of porous material or fiber material for absorbing impurities in liquid or air.

[0011] Since the impurity filter 1 is made into a curved shape, when liquid or air flows through the impurity filter 1, impurities in the liquid or air will be absorbed by the pipe wall 3 made of porous or fibrous material. In order to improve the absorption effect of the impurity filter 1, a magnetic field B and / or an electric field E2 can be applied on both sides of the impurity filter 1, the magnetic field B can effectively attract polarized particles in liquid or air, and the electric field E can effectively attract Charged particles in liquid or air. When liquid or air flows through the impurity filter 1, the magnetic field B or electric field E applied on both sides of the impurity filter 1 can accelerate the polarized particles or charged ions in the li...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An impurity filter with magnetic and electric fields is composed of a spiral small-diameter tube whose inner liner is made up of porous material or fibrous material for adsorbing the impurities, the electric field and / or magnetic field for polarizing the particles in liquid or gas flowing through the tube.

Description

technical field [0001] The invention relates to an impurity filter with a magnetic field and an electric field, which can effectively filter impurities in liquid or air used in semiconductor manufacturing process. Background technique [0002] In the semiconductor manufacturing process, liquid or air is often used, and impurities in the liquid or air will affect the properties and yield of semiconductors. Therefore, effectively removing or filtering impurities in liquid or air has become an important issue in semiconductor manufacturing. Filters are usually used to filter impurities in liquids or air. However, limited by the size of the filter screen, this filtering method can only filter impurities with larger diameters, and cannot effectively filter impurities with smaller diameters. Impurities with larger particles are easily filtered by the filter device. A common problem is how to effectively absorb or filter impurities with small particles, especially impurities wit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01D35/06
Inventor 刘勇
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products