Photoelectric detector and preparation method thereof

Abstract

The invention relates to the technical field of photoelectric detectors, and discloses a photoelectric detector and a preparation method thereof, and the photoelectric detector comprises a zinc oxide film and bismuth vanadate nanofibers compounded on the zinc oxide film. The photoelectric detector obtained by compounding the zinc oxide thin film and the bismuth vanadate nanofibers can realize detection in a wide spectral range (from UV to NIR region). Meanwhile, due to the fact that photo-generated electrons and holes are rapidly compounded to the ground, the quantum efficiency of zinc oxide is low, the compounding rate can be reduced by compounding the two materials, separation of the photo-generated electrons and the holes can be improved by generating a local electric field at the interface of the two materials, and the quantum efficiency of the device can be improved. The photoelectric detector is wide in detection range, can detect the near-infrared band from the ultraviolet band, is high in device responsivity, and can improve the quantum luminous efficiency of the device. The zinc oxide film is covered with the bismuth vanadate nanofibers, the manufacturing process is simple, and a large amount of cost can be saved.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a photodetector and a preparation method thereof. Background technique [0002] Photodetectors are devices that convert optical signals into electrical signals, and have important applications in display devices, wearable electronic devices, flexible sensors, and environmental monitoring. Pristine ZnO has been widely explored for its application in UV photodetectors. However, ZnO is a direct bandgap N-type semiconductor with a wide bandgap, its detection range is only in the ultraviolet band, and its quantum efficiency and responsivity are low, which can be attributed to the high recombination rate of photogenerated charge carriers. Therefore, the utility of ZnO in broadband photodetectors remains a challenge. SUMMARY OF THE INVENTION [0003] (1) Technical problems to be solved [0004] The purpose of the present invention is to provide a photodetector capable of rea...

AI Technical Summary

Problems solved by technology

However, ZnO is an N-type semiconductor with a direct bandgap and a wide bandgap, its detection range is only in the ultraviolet band, and its quantum efficiency and responsivity are low, which can be attributed to the high recombination rate of photogenerated charge carriers

Therefore, the utility of ZnO in broadband photodetectors remains a challenge

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