Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Anti-fuse memory array circuit, operation method thereof and memory

A memory array and anti-fuse technology, applied in the field of integrated circuits, can solve the problems of high power consumption, etc., and achieve the effects of reducing response speed requirements, reducing power consumption, and saving current

Pending Publication Date: 2022-06-24
CHANGXIN MEMORY TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current anti-fuse programmable memory needs a sense amplifier with a faster response speed when reading data, which consumes a lot of power.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Anti-fuse memory array circuit, operation method thereof and memory
  • Anti-fuse memory array circuit, operation method thereof and memory
  • Anti-fuse memory array circuit, operation method thereof and memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the specific embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be more thoroughly understood, and will fully convey the scope of the present disclosure to those skilled in the art.

[0052] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present disclosure. It will be apparent, however, to one skilled in the art that the present disclosure may be practiced without one or more of these details. In other instances, some technical features that are well known in the art have not been described in order to avoid obscurin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses an anti-fuse storage array circuit, an operation method thereof and a memory, and the anti-fuse storage array circuit comprises at least one anti-fuse storage array which comprises a plurality of anti-fuse storage units; and the programming control module is connected with the at least one anti-fuse storage array and is used for providing a fixed programming current when the anti-fuse storage unit is programmed.

Description

technical field [0001] The present disclosure relates to the technical field of integrated circuits, and in particular, to an anti-fuse memory array circuit, an operation method thereof, and a memory. Background technique [0002] One-time programmable devices based on anti-fuse technology are widely used in various chips. For example, in DRAM chips, anti-fuse programmable memory can store address information of defective memory cells, thereby realizing redundant replacement. (including row replacement and column replacement); the anti-fuse programmable memory can also be programmed to achieve precise adjustment of various parameters (such as voltage, current, frequency...) inside the chip. When the chip is powered on, the information stored in the anti-fuse programmable memory will be sent through the built-in transmission circuit and latched where it needs to be used. [0003] However, when reading data in the current anti-fuse programmable memory, a sense amplifier with ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/401G11C11/4063G11C11/4067
CPCG11C11/401G11C11/4063G11C11/4067
Inventor 季汝敏
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com