Memory assembly

Abstract

The invention discloses a memory component. The memory component comprises a memory structure. The memory structure includes a substrate, a channel region, a first doped region, a second doped region, a floating gate, and a dielectric layer. The channel region is arranged on the substrate. The first doped region and the second doped region are arranged on the substrate and located on the two sides of the channel region respectively. The floating gate is disposed on the channel region. The dielectric layer is arranged between the floating gate and the channel region, between the floating gate and the first doped region, and between the floating gate and the second doped region. The floating gate and the first doped region are partially overlapped, and / or the floating gate and the second doped region are not overlapped, and in the length direction of the channel region, the side wall, adjacent to the second doped region, of the floating gate is separated from the boundary between the second doped region and the channel region by a certain distance.

Description

technical field [0001] The present invention relates to a memory device, and more particularly to a memory device that can improve the phenomenon of weak-program or stuck bit (also known as over-erase). Background technique [0002] Non-volatile memory (non-volatile memory, NVM) has the advantages of multiple operations such as programming operations, reading operations, and erasing operations, and the stored data will not disappear after power off, so non-volatile memory has been widely used for personal computers and electronic equipment. [0003] In general, the efficiency of a program operation of a nonvolatile memory may depend on the coupling effect between the gate and the source and the coupling effect between the gate and the drain. Depending on the impact of the process on the memory components including the non-volatile memory, in one case the initial electron injection point of the non-volatile memory may be too high to inject enough electrons, so in the non-vol...

AI Technical Summary

Problems solved by technology

Depending on the impact of the process on the memory components including the non-volatile memory, in one case the initial electron injection point of the non-volatile memory may be too high to inject enough electrons, so in the non-volatile Weak programming occurs during the program operation of volatile memory

In another case, electrons may not be injected efficiently, so a fixed bit occurs during the programming operation of the non-volatile memory

As a result, the efficiency of programming operations can be affected by weak programming or fixed bit

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