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Czochralski centering calibration system and calibration method for single crystal furnace

A technology of calibration system and calibration method, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of poor reproducibility, low detection efficiency, and large error range, and achieve good consistency and high detection efficiency. Improve the effect of small error range

Pending Publication Date: 2022-05-13
内蒙古中环晶体材料有限公司
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Problems solved by technology

[0004] The invention provides a single crystal furnace straight pull centering calibration system and a calibration method, which are used to calibrate the coaxial line between the pulling steel wire and the quartz crucible, and solve the problem of large error range and low detection accuracy in the existing centering calibration method , and the technical problems of poor reproducibility and low detection efficiency

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  • Czochralski centering calibration system and calibration method for single crystal furnace
  • Czochralski centering calibration system and calibration method for single crystal furnace
  • Czochralski centering calibration system and calibration method for single crystal furnace

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Embodiment Construction

[0037] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0038] This embodiment proposes a single crystal furnace Czochralski alignment calibration system, such as figure 1 As shown, it is used to calibrate the coaxial line between the pulling steel wire 30 and the quartz crucible 40, including: a calibration part 50 placed inside the main chamber 10 of the single crystal furnace and suspended in the air, a monitoring part 60, and a monitoring part 60 for A connected processor, wherein the monitoring part 50 is coaxially arranged with the lifting steel wire 30, and is used to monitor whether the pulling steel wire 30 is coaxial with the calibration part 50; the lifting steel wire 30 is straightened and set; The weight at the lower end of the steel wire 30 is connected, and the height of the lower end surface of the calibration part 50 from the upper end surface of the quartz crucible 40 is 50-60 mm...

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Abstract

The invention relates to a single crystal furnace straight-pulling centering calibration system and calibration method, which is used for coaxial calibration of a lifting steel wire and a quartz crucible, and comprises: a calibration part which is arranged at the inner side of a single crystal furnace main chamber and is suspended; a monitoring unit; the processor is used for being connected with the monitoring part; wherein the lifting steel wire is straightened; the calibration part is connected with a heavy hammer at the lower end of the lifting steel wire; and the lower end surface of the calibration part is a certain distance away from the upper end surface of the quartz crucible. The method can quickly and accurately perform repeated centering calibration for multiple times, is stable in result and good in consistency, lays a foundation for ensuring rotation center coincidence of a crystal rod and a quartz crucible during subsequent crystal growth, reduces solid-liquid interface abnormity caused by molten silicon liquid level shaking, maximally ensures normal crystal growth, and improves the crystal quality. The overall error rate is reduced from 10% to 5%, the detection efficiency is improved by about 5%, the reproduction consistency is good, and the crystal growth qualification rate is improved.

Description

technical field [0001] The invention belongs to the technical field of Czochralski single crystal manufacturing equipment, and in particular relates to a Czochralski centering calibration system and a calibration method for a single crystal furnace. Background technique [0002] In the single crystal growth process, in order to ensure a good growth environment for the crystal, a stable solid-liquid interface is required to maintain the distribution of the thermal field temperature, that is, to reduce the liquid level jitter as much as possible during the single crystal pulling process. However, during the growth process of the single crystal, the pulling steel wire and the quartz crucible are coaxial and counter-rotated. If the rotation centers of the crystal rod and the quartz crucible do not coincide, then during the rotation of the quartz crucible, the silicon liquid in the quartz crucible will The resistance of the crystal rod will cause the crystal rod to swing up, caus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06
Inventor 吴树飞郝瑞军赵国伟周泽刘振宇杨瑞峰刘学王建宇
Owner 内蒙古中环晶体材料有限公司
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