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Thermal field adjusting device and method for single crystal growth

An adjustment device and field adjustment technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., to achieve the effects of fast cooling, increasing pulling speed, and reducing oxygen concentration

Pending Publication Date: 2022-04-05
XIAN ESWIN MATERIAL TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, the CZ method mainly maintains the stability of the thermal field inside the crystal pulling furnace through the synchronous rising of the crucible and the seed crystal and the rotation of the crucible and the seed crystal. Not a small disadvantage

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  • Thermal field adjusting device and method for single crystal growth
  • Thermal field adjusting device and method for single crystal growth
  • Thermal field adjusting device and method for single crystal growth

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Embodiment Construction

[0016] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0017] In the process of pulling single crystal silicon by CZ method in the crystal pulling furnace, the instability of the protective gas flow and the vibration caused by mechanical transmission will cause the problems of molten silicon liquid level vibration and single crystal silicon rod shaking during the rising process of the crucible. . Shaking single crystal silicon rods and unstable solid-liquid interface of molten silicon will destroy the stability of the thermal field in the crystal pulling furnace, leading to the formation of crystal defects. The above problems not only make it difficult for the crystal to grow without dislocation, but also have a very adverse effect on the quality of the crystal.

[0018] Continue to see attached figure 1 , as the crystal pulling...

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Abstract

The embodiment of the invention discloses a thermal field adjusting device and a thermal field adjusting method for single crystal growth. The thermal field adjusting device comprises a thermal insulation cylinder, a thermal field adjusting device and a thermal field adjusting device, wherein a guide cylinder is fixedly mounted at the top of the thermal insulation cylinder; the first control unit is configured to control the height position of the crucible to be unchanged in the crystal pulling process, and the second control unit is configured to drive the heat insulation cylinder to do lifting motion in the vertical direction in the crystal pulling process. And the distance between the bottom of the guide cylinder and the liquid level of the molten silicon is always kept consistent. And meanwhile, diversified thermal field control is realized by matching the independently moving heater with the movement of the heat insulation cylinder, so that more methods and supports are provided for adjusting process parameters, the lifting speed is easy to increase, the oxygen concentration is easy to reduce, and the crystal bar is faster to cool and grow.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of thermal field for crystal pulling, and in particular to a thermal field adjustment device and method for single crystal growth. Background technique [0002] The methods for manufacturing single crystal silicon rods include the zone melting method and the Czochralski method, and the Czochralski method (that is, the CZ method) is usually used. Under the protection of argon, the CZ method is to house the polysilicon material in a quartz crucible set in the furnace body of the crystal pulling furnace, melt the polysilicon raw material through a heater to obtain molten silicon, and continue to heat the molten silicon through the heater. The 10mm rod-shaped seed crystal (called seed crystal) is in contact with the molten silicon liquid surface. At the appropriate temperature required by the process, the silicon atoms in the molten silicon will follow the silicon atom arrangement structure...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/14C30B29/06C30B15/22C30B15/20
Inventor 不公告发明人
Owner XIAN ESWIN MATERIAL TECH CO LTD
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