Method for manufacturing efficient N-type TOPCon battery with boron-expanded SE structure

Abstract

The invention relates to a method for manufacturing an efficient N-type TOPCon battery with a boron-expanded SE structure. The method specifically comprises the following steps: S1, performing cleaning and texturing; S2, performing boron diffusion light doping; S3, polishing the back surface; S4, growing a tunneling oxide layer + Poly-si layer or S4, growing a tunneling oxide layer; S5, growing an in-situ phosphorus-doped thin layer; S6, removing Poly winding plating and BSG on the front surface and the periphery; S7, printing boron slurry; and S8, performing annealing to activate phosphorus doping and forming a boron diffusion SE structure. The method has the advantages that: the process route for realizing the boron diffusion SE structure is simple, the matching property with the conventional TOPCon process is high, the manufacturing method of combining boron diffusion light doping and silk-screen printing boron slurry heavy doping is adopted, so that the front surface structure of the cell enables the non-printing area to have light doping high sheet resistance, and the short-wave response of light is improved. Meanwhile, the silk-screen printing area has heavy doping low sheet resistance, the contact resistance of the front metal electrode is reduced, the short-circuit current and the filling factor are well improved, and the conversion efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for manufacturing a high-efficiency N-type TOPCon cell with a boron-expanded SE structure. Background technique [0002] Compared with P-type crystalline silicon cells, N-type crystalline silicon cells have a higher minority carrier life, no light-induced attenuation, good weak light effect, and small temperature coefficient, which is the hope for crystalline silicon solar cells to move towards the highest theoretical efficiency. TOPCon is a Tunnel Oxide Passivated Contact solar cell technology based on the principle of selective carriers. Its cell structure is an N-type silicon substrate cell, and a layer of ultra-thin silicon oxide is prepared on the back of the cell. , and then deposit a thin layer of doped silicon, which together form a passivation contact structure, effectively reducing surface recombination and metal contact recombination. But the metal-induce...

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Problems solved by technology

However, it is difficult to achieve on N-t

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